Novel electro-optic measurement technique for coplanar electrode-poled polymers

Author(s):  
Mehrdad Ziari ◽  
Srinath Kalluri ◽  
Sean M. Garner ◽  
William H. Steier ◽  
Zhiyong Liang ◽  
...  
1996 ◽  
Vol 69 (2) ◽  
pp. 275-277 ◽  
Author(s):  
Srinath Kalluri ◽  
Sean Garner ◽  
Mehrdad Ziari ◽  
William H. Steier ◽  
Yongqiang Shi ◽  
...  

1999 ◽  
Vol 08 (01) ◽  
pp. 89-105 ◽  
Author(s):  
P. Y. HAN ◽  
G. C. CHO ◽  
X.-C. ZHANG

We present in this article the recent development of the measurement technique for coherent free-space THz field and applications in the mid-infrared range. The technique is based on the second-order nonlinear optical interaction both for the generation and for the detection of THz pulse. Particularly the detection process based on free-space electro-optic sampling gives us a possibility to timely trace directly the ultrabroad band coherent THz field unparalleled by other technique. Using an ultrashort laser pulse our measurement system is feasible to measure the ultrashort THz pulse with a bandwidth up to 40 THz. We present a detailed comparative study on the generation and detection using different nonlinear material. We demonstrate applications of the coherent THz technique for time-resolved semiconductor spectroscopy, time-domain imaging with high spatial resolution and broad band refractive and absorptive characterization of material in the mid-infrared range.


2000 ◽  
Author(s):  
Zhanguo Chen ◽  
Gang Jia ◽  
Zhifa Wu ◽  
Yunlong Liu ◽  
Chao Zhao ◽  
...  

1986 ◽  
Vol 49 (8) ◽  
pp. 432-434 ◽  
Author(s):  
Z. H. Zhu ◽  
J‐P. Weber ◽  
S. Y. Wang ◽  
S. Wang

Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti

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