Thermal design of high temperature alkaline-earth vapor cells

2016 ◽  
Author(s):  
Jordan L. Armstrong ◽  
Nathan D. Lemke ◽  
Kyle W. Martin ◽  
Christopher J. Erickson
Keyword(s):  
High Temperature ◽  
Alkaline Earth ◽  
Thermal Design ◽  
Vapor Cells

Niobium-bearing arsenides and germanides from elemental mixtures not involving niobium: a new twist to an old problem in solid-state synthesis

2018 ◽  
Vol 74 (5) ◽  
pp. 623-627 ◽  
Author(s):  
Sviatoslav Baranets ◽  
Hua He ◽  
Svilen Bobev
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Diffraction Data ◽  
Alkaline Earth ◽  
Alkaline Earth Metals ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature Reactions ◽  
First Time ◽  
Synthetic Work

Three isostructural transition-metal arsenides and germanides, namely niobium nickel arsenide, Nb0.92(1)NiAs, niobium cobalt arsenide, NbCoAs, and niobium nickel germanide, NbNiGe, were obtained as inadvertent side products of high-temperature reactions in sealed niobium containers. In addition to reporting for the very first time the structures of the title compounds, refined from single-crystal X-ray diffraction data, this article also serves as a reminder that niobium containers may not be suitable for the synthesis of ternary arsenides and germanides by traditional high-temperature reactions. Synthetic work involving alkali or alkaline-earth metals, transition or early post-transition metals, and elements from groups 14 or 15 under such conditions may yield Nb-containing products, which at times could be the major products of such reactions.

High Temperature (230 °C) Isolated Power Supply

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000283-000288 ◽  
Author(s):  
B. Reese ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
A. Lostetter
Keyword(s):  
High Temperature ◽  
Power Supply ◽  
Single Layer ◽  
Thermal Design ◽  
Silicon On Insulator ◽  
Full Characterization ◽  
Soft Start ◽  
Power Switches ◽  
Layer Control

This paper discusses the development of a high temperature (i.e., 230 °C ambient) 100V–300V/15V 20W isolated power supply. The power supply is implemented using Silicon-Carbide (SiC) power switches, high-temperature silicon on insulator (HTSOI) control circuitry, as well as custom high temperature magnetics and packaging technology. The heart of this power supply is a custom-built PWM controller. The controller was built utilizing HTSOI component, which operate at temperatures as high as 300 °C. The developed power supply targets high ambient temperature environment applications and includes features such as housekeeping power supply, soft-start and under-voltage lockout. The power supply is packaged using a multi-chip module (MCM) packaging approach. A single layer power substrate and a multiple layer control substrate are used. Bare die devices are utilized to save space, reduce parasitic impedances, and increase temperature of operation and reliability. This paper provides details on the electrical and thermal design as well as fabrication and characterization of the power supply. Additionally, results of the full characterization of this power supply are provided; this includes temperature testing up to 230 °C, efficiency results, load transition behavior, output ripple, etc.

A Study on Electrical Resistivity of BaO–CaO–SiO2–Al2O3 Seal Glass Used in Solid Oxide Electrolytic Cell (SOEC)

2012 ◽  
Vol 512-515 ◽  
pp. 1574-1578 ◽  
Author(s):  
Jie Hao ◽  
Chang Sheng Deng ◽  
Qing Feng Zan ◽  
Jing Ming Xu
Keyword(s):  
Electrical Resistivity ◽  
High Temperature ◽  
Field Strength ◽  
Alkaline Earth ◽  
Room Temperature ◽  
Electrolytic Cell ◽  
Solid Oxide ◽  
Average Field ◽  
Impedance Analyzer

The electrical resistivty (R) of BaO–CaO–SiO2–Al2O3 (BCSA) based glass, which was used in SOEC, was measured by impedance analyzer from room temperature to sealing temperature, and it was founded that electrical resistivity of all seal glass decreases with temperature. When temperature is lower than the soften temperature of glass, the electrical resistivity of all seal glass was no less than 107Ω∙cm. At 850°C, the resistivity of the 16BaO–16CaO–42SiO2–8Al2O3 glass (G1) reached 4.40×106Ω∙cm, and even at the sealing temperature, their resistivity was still above 105-106Ω∙cm. With the decrease of ratio of Si/B from 3 to 1, the electrical resistivity of glass decreased from 4.40×106Ω∙cm to 8.96×104Ω∙cm. The electrical resistivity of glass in BCSA system could be significantly affected by B2O3 and alkaline earth oxides. The results show that the electrical resistivity of glass was improved with the increasing of non-bridging oxygen and the average field strength. All glasses can be used as sealants at high temperature with no electrical shunting in SOEC.

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