Characterizations of InAs quantum dot lasers butt-joint coupled with silicon photonics waveguides

2016 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan Preble ◽  
Chi-Sen Lee ◽  
Wei Guo
Keyword(s):  
Quantum Dot ◽  
Silicon Photonics ◽  
Butt Joint ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

scholarly journals A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2734
Author(s):  
Matteo Buffolo ◽  
Carlo De Santi ◽  
Justin Norman ◽  
Chen Shang ◽  
John Edward Bowers ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Silicon Photonics ◽  
Laser Diodes ◽  
Misfit Dislocations ◽  
Extended Defects ◽  
Quantum Dot Lasers ◽  
Degradation Mechanisms ◽  
Inas Quantum Dot ◽  
The Impact

With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers.

High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

2018 ◽  
Author(s):  
Daehwan Jung ◽  
Robert Herrick ◽  
Justin Norman ◽  
Yating Wan ◽  
Arthur C. Gossard ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Band filling in p-doped InAs quantum dot lasers

2011 ◽  
Author(s):  
M. Hutchings ◽  
I. O’Driscoll ◽  
P. M. Smowton ◽  
P. Blood
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Band Filling ◽  
Inas Quantum Dot

Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon

2021 ◽  
Author(s):  
Matteo Buffolo ◽  
Lorenzo Rovere ◽  
Carlo De Santi ◽  
Justin Norman ◽  
John E. Bowers ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

scholarly journals Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

2015 ◽  
Vol 107 (17) ◽  
pp. 171106 ◽  
Author(s):  
Weng W. Chow ◽  
Alan Y. Liu ◽  
Arthur C. Gossard ◽  
John E. Bowers
Keyword(s):  
Quantum Dot ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers

2006 ◽  
Vol 18 (8) ◽  
pp. 965-967 ◽  
Author(s):  
I.C. Sandall ◽  
P.M. Smowton ◽  
C.L. Walker ◽  
H.Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot
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