Study on mechanical characteristics of PZT thin film for sensors and actuators

1995 ◽  
Author(s):  
Shyuichi Wakabayashi ◽  
Hiromi Totani ◽  
Minoru Sakata ◽  
Masaaki Ikeda ◽  
Hiroshi Goto ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Characteristics ◽  
Sensors And Actuators ◽  
Pzt Thin Film

Demonstration and characterization of PZT thin-film sensors and actuators for meso- and micro-structures

2004 ◽  
Vol 116 (3) ◽  
pp. 369-377 ◽  
Author(s):  
Yi-Chu Hsu ◽  
Chia-Che Wu ◽  
Cheng-Chun Lee ◽  
G.Z. Cao ◽  
I.Y. Shen
Keyword(s):  
Thin Film ◽  
Sensors And Actuators ◽  
Thin Film Sensors ◽  
Pzt Thin Film ◽  
Micro Structures

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Piezoelectric PZT thin-film transformers with a ring–dot structure

2020 ◽  
Vol 59 (SP) ◽  
pp. SPPD09
Author(s):  
Sang-Hyo Kweon ◽  
Kazuki Tani ◽  
Kensuke Kanda ◽  
Sahn Nahm ◽  
Isaku Kanno
Keyword(s):  
Thin Film ◽  
Pzt Thin Film

Measurement of d15 Shear-Mode Piezoelectric Response in PZT Thin Film

2009 ◽  
Vol 421-422 ◽  
pp. 95-98
Author(s):  
Tsuyoshi Aoki ◽  
Shigeyoshi Umemiya ◽  
Masaharu Hida ◽  
Kazuaki Kurihara
Keyword(s):  
Thin Film ◽  
Fem Analysis ◽  
Active Part ◽  
Piezoelectric Response ◽  
Small Displacement ◽  
Shear Mode ◽  
Mems Devices ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Piezoelectric Constants

Piezoelectric films using d15 shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d15 shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 m-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d15 piezoelectric constant of the film was 590 pm/V. And, the d31 value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.

Highly sensitive triaxial silicon accelerometer with integrated PZT thin film detectors

2001 ◽  
Vol 92 (1-3) ◽  
pp. 156-160 ◽  
Author(s):  
Korbinian Kunz ◽  
Peter Enoksson ◽  
Göran Stemme
Keyword(s):  
Thin Film ◽  
Pzt Thin Film ◽  
Highly Sensitive

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr0.5 Ti0.5O3 Thin Film on a SrRuO3/SrTiO3 Substrate

1999 ◽  
Vol 14 (4) ◽  
pp. 1190-1193 ◽  
Author(s):  
J. H. Kim ◽  
A. T. Chien ◽  
F. F. Lange ◽  
L. Wills
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Transmission Electron ◽  
Saturation Polarization ◽  
Pzt Thin Film ◽  
Relationship Of

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 °C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT ║ (001) [010]SRO ║ (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps) density were measured to be Pr ~ 51.4 µC/cm2 and Ps ~ 62.1 µC/cm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 × 108 cycles.

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