Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks

2016 ◽  
Author(s):  
Polina P. Vabishchevich ◽  
Alexander S. Shorokhov ◽  
Maxim R. Shcherbakov ◽  
Andrey A. Fedyanin
Keyword(s):  
Amorphous Silicon ◽  
Optical Switching ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
All Optical ◽  
Hydrogenated Amorphous ◽  
All Optical Switching

scholarly journals Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

2014 ◽  
Vol 22 (4) ◽  
pp. 3797 ◽  
Author(s):  
Jason S. Pelc ◽  
Kelley Rivoire ◽  
Sonny Vo ◽  
Charles Santori ◽  
David A. Fattal ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Optical Switching ◽  
Hydrogenated Amorphous Silicon ◽  
Microring Resonators ◽  
All Optical ◽  
Hydrogenated Amorphous ◽  
All Optical Switching

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

Optical switching in hydrogenated amorphous silicon–sulfur alloy prepared by glow discharge

2004 ◽  
Vol 345-346 ◽  
pp. 302-305 ◽  
Author(s):  
S. Al-Dallal ◽  
F.Z. Henari ◽  
S.M. Al-Alawi ◽  
S.R. Arekat ◽  
H. Manaa
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Optical Switching ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

scholarly journals Broadband all-optical modulation in hydrogenated-amorphous silicon waveguides

2010 ◽  
Vol 18 (10) ◽  
pp. 9809 ◽  
Author(s):  
Karthik Narayanan ◽  
Ali W. Elshaari ◽  
Stefan F. Preble
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optical Modulation ◽  
Silicon Waveguides ◽  
All Optical ◽  
Hydrogenated Amorphous

scholarly journals Kerr and free carrier ultrafast all-optical switching of GaAs/AlAs nanostructures near the three photon edge of GaAs

2008 ◽  
Vol 104 (8) ◽  
pp. 083105 ◽  
Author(s):  
Alex Hartsuiker ◽  
Philip J. Harding ◽  
Yoanna-Reine Nowicki-Bringuier ◽  
Jean-Michel Gérard ◽  
Willem L. Vos
Keyword(s):  
Optical Switching ◽  
Free Carrier ◽  
All Optical ◽  
All Optical Switching

All-optical switching in an asymmetric silicon Fabry–Perot étalon based on the free-carrier plasma effect

1994 ◽  
Vol 33 (18) ◽  
pp. 3871 ◽  
Author(s):  
Y. M. Liu ◽  
X. Xiao ◽  
P. R. Prucnal ◽  
J. C. Sturm
Keyword(s):  
Optical Switching ◽  
Free Carrier ◽  
Fabry Perot ◽  
All Optical ◽  
All Optical Switching ◽  
Plasma Effect
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