Optical and mechanical properties of infrared thin film at cryogenic temperature

2015 ◽  
Author(s):  
Fabien Pradal ◽  
Rémi Lhuillier ◽  
Daniel Mouricaud
2002 ◽  
Vol 749 ◽  
Author(s):  
Ping Hou ◽  
Lianchao Sun

ABSTRACTThe optical and mechanical properties of TiO2 film prepared by ion-assisted e-beam evaporation have been examined in this research. Spectroscopic ellipsometry analysis revealed an inhomogeneous behavior in both optical property and growth structure, vertically from substrate to the top surface of the film. This phenomenon was further confirmed with the electron microscopic analyses. The effects of deposition rate, chamber pressure, anode voltage and current on the stress of TiO2 films were also investigated and reported. Further study showed that a structural homogeneous film could be obtained through TiO2-SiO2 co-evaporation.


2019 ◽  
Vol 12 (24) ◽  
pp. 52-59
Author(s):  
Alaa A. Abdul-Hamead

In this paper a thin films of selenium was prepare on substrates of n-Si by evaporation in a vacuum technique with thickness about 0.5μm. And then an annealing process was done on samples at two temperature (100 and 200) C ° in a vacuum furnace (10-3 torr).Some structural, optical and mechanical properties of prepared thin films were measured. Results showed that the prepared film was the crystallization, optical transmittance and micro hardness of the prepared thin films increased significantly after annealing.


Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.


Shinku ◽  
1987 ◽  
Vol 30 (5) ◽  
pp. 374-377
Author(s):  
Tsutom YOTSUYA ◽  
Ziro ISHIBE ◽  
Masaaki YOSHITAKE ◽  
Yoshihiko SUZUKI ◽  
Junya YAMAMOTO

2021 ◽  
Vol 56 (12) ◽  
pp. 7451-7463
Author(s):  
Yusheng Wang ◽  
Xiaowei Wu ◽  
Nahong Song ◽  
Xiaohui Yang ◽  
Yafeng Zheng ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sahib Hasan ◽  
Khagendra Baral ◽  
Neng Li ◽  
Wai-Yim Ching

AbstractChalcogenide semiconductors and glasses have many applications in the civil and military fields, especially in relation to their electronic, optical and mechanical properties for energy conversion and in enviormental materials. However, they are much less systemically studied and their fundamental physical properties for a large class chalcogenide semiconductors are rather scattered and incomplete. Here, we present a detailed study using well defined first-principles calculations on the electronic structure, interatomic bonding, optical, and mechanical properties for 99 bulk chalcogenides including thirteen of these crytals which have never been calculated. Due to their unique composition and structures, these 99 bulk chalcogenides are divided into two main groups. The first group contains 54 quaternary crystals with the structure composition (A2BCQ4) (A = Ag, Cu; B = Zn, Cd, Hg, Mg, Sr, Ba; C = Si, Ge, Sn; Q = S, Se, Te), while the second group contains scattered ternary and quaternary chalcogenide crystals with a more diverse composition (AxByCzQn) (A = Ag, Cu, Ba, Cs, Li, Tl, K, Lu, Sr; B = Zn, Cd, Hg, Al, Ga, In, P, As, La, Lu, Pb, Cu, Ag; C = Si, Ge, Sn, As, Sb, Bi, Zr, Hf, Ga, In; Q = S, Se, Te; $$\hbox {x} = 1$$ x = 1 , 2, 3; $$\hbox {y} = 0$$ y = 0 , 1, 2, 5; $$\hbox {z} = 0$$ z = 0 , 1, 2 and $$\hbox {n} = 3$$ n = 3 , 4, 5, 6, 9). Moreover, the total bond order density (TBOD) is used as a single quantum mechanical metric to characterize the internal cohesion of these crystals enabling us to correlate them with the calculated properties, especially their mechanical properties. This work provides a very large database for bulk chalcogenides crucial for the future theoretical and experimental studies, opening opportunities for study the properties and potential application of a wide variety of chalcogenides.


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