Impact of thermal treatment on electrical characteristics and charge collection efficiency of Me-GaAs:Cr-Me x-ray sensors

2015 ◽  
Author(s):  
V. Novikov ◽  
A. Zarubin ◽  
O. Tolbanov ◽  
A. Tyazhev ◽  
A. Lozinskaya ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Electrical Characteristics ◽  
Charge Collection Efficiency ◽  
X Ray

Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide

2016 ◽  
Vol 59 (2) ◽  
pp. 295-300
Author(s):  
A. N. Zarubin ◽  
I. I. Kolesnikova ◽  
A. D. Lozinskaya ◽  
V. A. Novikov ◽  
M. S. Skakunov ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Gallium Arsenide ◽  
Electrical Properties ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray

INFLUENCE OF WINDOW EFFECT OF SEMICONDUCTOR X-RAY DETECTORS ON THE RESPONSE FUNCTION AND DETECTION EFFICIENCY

1992 ◽  
Vol 02 (03) ◽  
pp. 255-262
Author(s):  
K. SHIMA
Keyword(s):  
Response Function ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Dead Layer ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray ◽  
Window Effect ◽  
Low Energy Tail ◽  
The Dead

In order to search the dead layer of a Si(Li) x-ray detector, the jump ratio of the detection efficiency observed at the Si-K-edge energy was precisely measured by changing the incident photon energies at around 1.84 keV by using monoenergetic photons provided by SOR. Here, the dead layer is meant to be the Si region where the charge collection efficiency, η, is zero. As the result, the dead layers for two detectors investigated at present turned out to be absent. On the other hand, the Si front layers in which the charge collection is incomplete (0<η<1) were estimated to be 0.26 µm and 0.17 µm from a simple analysis for low energy tail spectrum. From these results, the effect of detector window on the response function and detection efficiency is discussed.

Effects of x-ray irradiation on charge transport and charge collection efficiency in stabilized a-Se photoconductors

2020 ◽  
Vol 127 (8) ◽  
pp. 084502 ◽  
Author(s):  
S. O. Kasap ◽  
J. Yang ◽  
B. Simonson ◽  
E. Adeagbo ◽  
M. Walornyj ◽  
...  
Keyword(s):  
Charge Transport ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray

CHARACTERISTICS OF CVD DIAMOND FILMS IN DETECTING UV, X-RAY AND ALPHA PARTICLE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1018-1023 ◽  
Author(s):  
J. AHN ◽  
B. GAN ◽  
Q. ZHANG ◽  
S. F. YOON ◽  
V. LIGATCHEV ◽  
...  
Keyword(s):  
Visible Light ◽  
Alpha Particle ◽  
Uv Light ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Response Speed ◽  
Cvd Diamond ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray

The CVD diamond UV photodetector shows more than four orders of photoresponsivity discrimination between UV and visible light. Post-treatment on as-fabricated photodetector is essential for a good response to UV light and blindness to visible light. The CVD diamond X-ray detector shows linear dependence of photocurrent on X-ray intensity and high response speed. The mapping of charge collection efficiency on the whole sensing area of a CVD diamond alpha particle detector has been obtained using ion-beam-induced charge microscopy technique. Three peaks have been observed in the charge collection spectrum.

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