Large-area lithography-free perfect absorbers, color filters, and photodetectors at visible frequencies using ultra-thin silver or amorphous silicon films (Presentation Recording)

2015 ◽  
Author(s):  
Zhongyang Li ◽  
Serkan Butun ◽  
Koray Aydin
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Large Area ◽  
Perfect Absorbers ◽  
Color Filters

Deposition of large area amorphous silicon films by ECR plasma CVD

Vacuum ◽  
1997 ◽  
Vol 48 (2) ◽  
pp. 119-122 ◽  
Author(s):  
Y Ueda ◽  
Y Inoue ◽  
S Shinohara ◽  
Y Kawai
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Plasma Cvd ◽  
Large Area ◽  
Ecr Plasma

Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices

2002 ◽  
Vol 74 (3) ◽  
pp. 359-367 ◽  
Author(s):  
Pere Roca i Cabarrocas ◽  
Anna Fontcuberta i Morral ◽  
Sarra Lebib ◽  
Yves Poissant
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Electronic Devices ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Large Area ◽  
Plasma Production ◽  
Silicon Thin Films ◽  
Powder Formation ◽  
Silicon Particles

Powder formation in silane plasmas has been considered as a technology drawback because it might lead to the formation of macroscopic defects in the deposited layers. Here we summarize our recent efforts in controlling the formation of powder precursors, in particular, nanocrystalline silicon particles, aiming at their incorporation in the films. Indeed, the incorporation of clusters and crystallites along with SiHx radicals allows production of polymorphous silicon films with improved structure and transport properties with respect to standard amorphous silicon films.

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted
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