InAs-GaSb-AlSb quantum confined structures for IR applications

Author(s):  
Craig A. Hoffman ◽  
Jerry R. Meyer ◽  
Filbert J. Bartoli ◽  
James R. Waterman ◽  
Benjamin V. Shanabrook ◽  
...  
2016 ◽  
Vol 50 (9) ◽  
pp. 1180-1185 ◽  
Author(s):  
A. M. Nadtochiy ◽  
N. A. Kalyuzhnyy ◽  
S. A. Mintairov ◽  
A. S. Payusov ◽  
S. S. Rouvimov ◽  
...  

1994 ◽  
Vol 30 (2) ◽  
pp. 619-630 ◽  
Author(s):  
A.V. Nurnikko ◽  
R.L. Gunshor

1990 ◽  
Vol 57 (3) ◽  
pp. 285-287 ◽  
Author(s):  
Inho Kim ◽  
T. K. Gustafson ◽  
Lars Thylén

2016 ◽  
Vol 1 (1) ◽  
pp. 74-85 ◽  
Author(s):  
Daniel Kaiser ◽  
Swapnadip Ghosh ◽  
Sang M. Han ◽  
Talid Sinno

Semiconductor alloys such as silicon–germanium (SiGe) offer attractive environments for stress-driven compositional engineering of quantum-confined structures that are the basis for a host of current and future optoelectronic devices.


2017 ◽  
Vol 12 (03) ◽  
pp. C03032-C03032
Author(s):  
M. Tortora ◽  
G. Biasiol ◽  
G. Cautero ◽  
R.H. Menk ◽  
J.R. Plaisier ◽  
...  

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