Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

2014 ◽  
Author(s):  
R. G. Useinov ◽  
G. I. Zebrev ◽  
V. V. Emelyanov ◽  
A. S. Vatuev
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Single Event ◽  
Power Mosfets ◽  
Heavy Ion Irradiation

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

scholarly journals The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 440
Author(s):  
Yanan Liang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Xuan Wang ◽  
Qian Chen ◽  
...  
Keyword(s):  
Low Voltage ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Track Length ◽  
Single Event ◽  
Single Event Effects ◽  
Heavy Ion Irradiation ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Tcad Simulation

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I

2019 ◽  
Vol 66 (10) ◽  
pp. 4235-4242 ◽  
Author(s):  
C. Abbate ◽  
G. Busatto ◽  
D. Tedesco ◽  
A. Sanseverino ◽  
L. Silvestrin ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Power Mosfets ◽  
Heavy Ion Irradiation

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses

2014 ◽  
Vol 778-780 ◽  
pp. 440-443 ◽  
Author(s):  
Manato Deki ◽  
Takahiro Makino ◽  
Kazutoshi Kojima ◽  
Takuro Tomita ◽  
Takeshi Ohshima
Keyword(s):  
Dielectric Breakdown ◽  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Single Event ◽  
Leakage Currents ◽  
Mos Capacitors ◽  
Heavy Ion Irradiation ◽  
Mos Devices ◽  
Thin Gate Oxide

The leakage currents through the gate oxide of MOS capacitors fabricated on n-type 4H-Silicon Carbide (SiC) was measured under accumulation bias conditions with heavy-ion irradiation. The Linear Energy Transfer (LET) dependence of the critical electric field (Ecr) at which dielectric breakdown occurred in these capacitors with two different oxide thicknesses was evaluated. The MOS capacitors with thin gate oxide showed higherEcrvalues than those with thick gate oxide. The linear relationship between the reciprocalEcrandLETwas observed for both MOS capacitors. The slope ofLETdependence of 1/Ecrfor SiC MOS capacitors was smaller than that for Si, suggesting that SiC MOS devices are less susceptible to single-event gate rupture (SEGR) than Si MOS devices.

Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part II

2019 ◽  
Vol 66 (10) ◽  
pp. 4243-4250 ◽  
Author(s):  
C. Abbate ◽  
G. Busatto ◽  
D. Tedesco ◽  
A. Sanseverino ◽  
Francesco Velardi ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Power Mosfets ◽  
Heavy Ion Irradiation

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

2017 ◽  
Vol 64 (9) ◽  
pp. 2511-2518 ◽  
Author(s):  
Rongmei Chen ◽  
Fengqi Zhang ◽  
Wei Chen ◽  
Lili Ding ◽  
Xiaoqiang Guo ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Pulsed Laser ◽  
Heavy Ion ◽  
Guard Ring ◽  
Single Event ◽  
Heavy Ion Irradiation
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