Preparation of novel HTS films and tunnel junctions for advanced C3I sensor applications

2015 ◽  
Author(s):  
Benjamin J. Taylor ◽  
Teresa H. Emery ◽  
Susan A. E. Berggren ◽  
Anna M. Leese de Escobar ◽  
Inho Jeon ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Sensor Applications ◽  
Hts Films

Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

2011 ◽  
Vol 50 (1R) ◽  
pp. 013001 ◽  
Author(s):  
Kousuke Fujiwara ◽  
Mikihiko Oogane ◽  
Futoyoshi Kou ◽  
Daisuke Watanabe ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensor ◽  
Free Layer ◽  
Sensor Applications ◽  
Field Sensor

AlOx barrier growth in magnetic tunnel junctions for sensor applications

2016 ◽  
Vol 412 ◽  
pp. 181-184 ◽  
Author(s):  
S. Knudde ◽  
G. Farinha ◽  
D.C. Leitao ◽  
R. Ferreira ◽  
S. Cardoso ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Sensor Applications

Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

2011 ◽  
Vol 50 ◽  
pp. 013001 ◽  
Author(s):  
Kousuke Fujiwara ◽  
Mikihiko Oogane ◽  
Futoyoshi Kou ◽  
Daisuke Watanabe ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensor ◽  
Free Layer ◽  
Sensor Applications ◽  
Field Sensor

scholarly journals Effect of second-order magnetic anisotropy on nonlinearity of conductance in CoFeB/MgO/CoFeB magnetic tunnel junction for magnetic sensor devices

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Takahiro Ogasawara ◽  
Mikihiko Oogane ◽  
Muftah Al-Mahdawi ◽  
Masakiyo Tsunoda ◽  
Yasuo Ando
Keyword(s):  
Magnetic Anisotropy ◽  
Dynamic Range ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Anisotropy Field ◽  
Second Order ◽  
Free Layer ◽  
Sensor Applications ◽  
Model Based ◽  
Field Sensor

AbstractWe studied the effect of second-order magnetic anisotropy on the linear conductance output of magnetic tunnel junctions (MTJs) for magnetic-field-sensor applications. Experimentally, CoFeB/MgO/CoFeB-based MTJs were fabricated, and the nonlinearity, NL was evaluated for different thicknesses, t of the CoFeB free layer from the conductance. As increasing t from 1.5 to 2.0 nm, maximum NL, NLmax was found to decrease from 1.86 to 0.17% within the dynamic range, Hd = 1.0 kOe. For understanding the origin of such NL behavior, a theoretical model based on the Slonczewski model was constructed, wherein the NL was demonstrated to be dependent on both the normalized second-order magnetic anisotropy field of Hk2/|Hkeff| and the normalized dynamic range of Hd/|Hkeff|. Here, Hkeff, Hk2, are the effective and second-order magnetic anisotropy field of the free layer in MTJ. Remarkably, experimental NLmax plotted as a function of Hk2/|Hkeff| and Hd/|Hkeff|, which were measured from FMR technique coincided with the predictions of our model. Based on these experiment and calculation, we conclude that Hk2 is the origin of NL and strongly influences its magnitude. This finding gives us a guideline for understanding NL and pioneers a new prospective for linear-output MTJ sensors to control sensing properties by Hk2.

Tantalum superconducting tunnel junctions for photon counting detectors

2002 ◽  
Vol 12 (3) ◽  
pp. 145-148
Author(s):  
C. Jorel ◽  
P. Feautrier ◽  
J.-C. Villégier ◽  
A. Benoit
Keyword(s):  
Tunnel Junctions ◽  
Photon Counting ◽  
Superconducting Tunnel Junctions ◽  
Photon Counting Detectors

Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 767-770 ◽  
Author(s):  
T. Daibou ◽  
M. Oogane ◽  
Y. Ando ◽  
C. Kim ◽  
O. Song ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance
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