Spin-spray plating of spinel ferrite films on semiconductor substrates

1990 ◽  
Author(s):  
Kee C. Yoo ◽  
Salvador H. Talisa
2000 ◽  
Vol 77 (24) ◽  
pp. 4016-4018 ◽  
Author(s):  
Yuji Muraoka ◽  
Hitoshi Tabata ◽  
Tomoji Kawai

2018 ◽  
Vol 113 (8) ◽  
pp. 082404 ◽  
Author(s):  
R. C. Budhani ◽  
Satoru Emori ◽  
Zbigniew Galazka ◽  
Benjamin A. Gray ◽  
Maxwell Schmitt ◽  
...  

2005 ◽  
Vol 493 (1-2) ◽  
pp. 49-53 ◽  
Author(s):  
Emmanuelle Mugnier ◽  
Isabelle Pasquet ◽  
Antoine Barnabé ◽  
Lionel Presmanes ◽  
Corine Bonningue ◽  
...  

2010 ◽  
Vol 123 (1) ◽  
pp. 16-19 ◽  
Author(s):  
A.K. Subramani ◽  
K. Kondo ◽  
M. Tada ◽  
M. Abe ◽  
M. Yoshimura ◽  
...  

2010 ◽  
Vol 46 (2) ◽  
pp. 212-215 ◽  
Author(s):  
L. A. Mitlina ◽  
A. A. Sidorov ◽  
Yu. V. Velikanova ◽  
M. R. Vinogradova ◽  
G. S. Badrtdinov

2005 ◽  
Vol 87 (15) ◽  
pp. 152505 ◽  
Author(s):  
Xu Zuo ◽  
Aria Yang ◽  
Soack-Dae Yoon ◽  
Joseph A. Christodoulides ◽  
Vincent G. Harris ◽  
...  

1998 ◽  
Vol 22 (S_2_MORIS_97) ◽  
pp. S2_109-112
Author(s):  
Z. Šimša ◽  
Ph. Tailhades ◽  
C. Baubet ◽  
L. Štichauer

2011 ◽  
Vol 687 ◽  
pp. 756-758
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Fa Shen Li

Thin films of CoFe2O4 spinel ferrite were prepared on silicon (100) substrates at low temperature by means of a modified polyvinyl alcohol processing, and the structure and magnetic properties as a function of the only one varied calcination temperature were investigated in detail and optimized. The CoFe2O4 ferrite films had a single phase spinel structure and were well-crystallized at temperature above 600 °C, which is much lower than the required temperature in the traditional ceramic method (about 1000 °C). The films annealed at and above 500 °C for 1h showed the grain sizes between 9 and 40 nm, and exhibited high coercivities and high saturation magnetization. Co-ferrite films prepared by sol-gel method and annealed at 700 °C had excellent potential for important technological applications, such as information storage and magnetooptical devices.


1995 ◽  
Vol 401 ◽  
Author(s):  
Y. Suzuki ◽  
R. B. Van Dover ◽  
V. Korenivski ◽  
D. Werder ◽  
C. H. Chen ◽  
...  

AbstractThe successful growth of single crystal ferrites in thin film form is an important step towards their future incorporation into integrated circuits operating at microwave frequencies. We have successfully grown high quality single crystalline spinel ferrite thin films of (Mn, Zn)Fe2O4 and CoFe2O4 on (100) and (110) SrTiO3 and MgAl2O4 at low temperature. These ferrite films are buffered with spinel structure layers that are paramagnetic at room temperature. In contrast to ferrite films grown directly on the substrates, ferrite films grown on buffered substrates exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the immediately underlying layer. X-ray, RBS, AFM and TEM analysis provide a consistent picture of the structural properties of these ferrite films. We then use this technique to grow exchange-coupled bilayers of single crystalline CoFe2O4 and (Mn, Zn)Fe2O4. In these bilayers, we observe strong exchange coupling across the interface that is similar in strength to the exchange coupling in the individual layers.


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