Pulsed excimer laser depositon of high Tc superconductor thin films on Si with and without oxide barrier

1990 ◽  
Author(s):  
R. D. Vispute ◽  
S. T. Bendre ◽  
R. R. Viswanathan ◽  
S. M. Chaudhari ◽  
S. M. Kanetkar ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
High Tc ◽  
High Tc Superconductor ◽  
Oxide Barrier ◽  
Superconductor Thin Films

Pulsed excimer laser deposition of high Tc superconductor thin films on Si with and without oxide barrier

1990 ◽  
Author(s):  
R. D. Vispute ◽  
S. T. Bendre ◽  
R. R. Viswanathan ◽  
S. M. Chaudhari ◽  
S. M. Kanetkar ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Deposition ◽  
High Tc ◽  
High Tc Superconductor ◽  
Oxide Barrier ◽  
Superconductor Thin Films

scholarly journals Magnetic field dependence of Josephson photoresponse in high-Tc superconductor thin films

1994 ◽  
Vol 89 (8) ◽  
pp. 705-708 ◽  
Author(s):  
Gi. Schneider ◽  
P.G. Huggard ◽  
T.P. O'Brien ◽  
W. Blau ◽  
W. Prettl
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
High Tc ◽  
High Tc Superconductor ◽  
Superconductor Thin Films

Preparation of high Tc superconductor thin films of YBaCuO on crystalline Garnet substrates

1991 ◽  
Vol 77 (3) ◽  
pp. 217-219 ◽  
Author(s):  
P. Mukhopadhyay ◽  
S. Gorwadkar ◽  
S.B. Ogale ◽  
R.D. Vispute
Keyword(s):  
Thin Films ◽  
High Tc ◽  
High Tc Superconductor ◽  
Superconductor Thin Films

Evidence for grain boundary substructure in high-Tc superconductor thin films from Josephson photoresponse

1995 ◽  
Author(s):  
Giselher Schneider ◽  
T. P. O'Brien ◽  
Werner J. Blau ◽  
Peter G. Huggard ◽  
Wilhelm Prettl
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
High Tc ◽  
High Tc Superconductor ◽  
Superconductor Thin Films

Peak-effect, a new phenomenon observed at microwave frequencies in high Tc superconductor thin films

2002 ◽  
Vol 382 (4) ◽  
pp. 386-394
Author(s):  
A.R Bhangale ◽  
T Banerjee ◽  
P Raychaudhuri ◽  
S.P Pai ◽  
J John ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Effect ◽  
High Tc ◽  
Microwave Frequencies ◽  
High Tc Superconductor ◽  
Superconductor Thin Films

Role of twins in peak effect phenomenon observed at microwave frequencies in high Tc superconductor thin films

2004 ◽  
Vol 405 (1) ◽  
pp. 14-24 ◽  
Author(s):  
Tamalika Banerjee ◽  
V.C. Bagwe ◽  
J. John ◽  
S.P. Pai ◽  
K. Ganesh Kumara ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Effect ◽  
High Tc ◽  
Microwave Frequencies ◽  
High Tc Superconductor ◽  
Superconductor Thin Films

High-Tc Superconductor Multilevel Structures formed with Ta205 Spacer Layers

1989 ◽  
Vol 169 ◽  
Author(s):  
Rabi S. Bhattacharya ◽  
P.B. Kosel ◽  
T. Peterson
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Tantalum Oxide ◽  
High Tc ◽  
High Tc Superconductor ◽  
Current State ◽  
Layer Structures ◽  
Spacer Layer ◽  
Htsc Thin Films ◽  
Oxide Barrier

AbstractAn important class of electronic devices could be realized with current state-of-the-art high-Tc superconductor (HTSC) thin films if a method were found for the formation of multilevel structures separated by thin dielectric layers. It has been found that such structures can be formed with tantalum oxide as the spacer layer because of its high melting point (1870°C) and good chemical stability at the high temperatures commonly used to anneal thin films of YBaCuO superconductor. Good results have been achieved with thin films prepared by electron beam (EB) sequential deposition from Y, BaF2 and Cu targets onto oriented (100) strontium titanate substrates and oxygen furnace annealing at 850°C to promote the epitaxial alignment and growth of the superconducting crystalline phase. Two-layer structures have been formed by interposing a tantalum oxide barrier deposited by EB evaporation between two successive layers of HTSC films. The transition temperatures of both layers were checked by resistance measurements and found to display superconductivity after annealing. However, the top (second) layer was found to always show a reduced abruptness of the transition characteristic thereby indicating, perhaps, a lesser degree of epitaxial alignment since it makes no direct contact with the substrate surface.

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