A ZnSe/BeTe p-grading superlattice with a low voltage drop for efficient hole injection in green-yellow BeZnCdSe quantum well laser

2015 ◽  
Author(s):  
R. Akimoto
Keyword(s):  
Quantum Well ◽  
Low Voltage ◽  
Voltage Drop ◽  
Hole Injection ◽  
Quantum Well Laser

Reduction of the Low Voltage Substation Constraints by Inserting Photovoltaic Systems in Underserved Areas

2019 ◽  
Vol 12 (2) ◽  
pp. 105-112
Author(s):  
Benbouza Naima ◽  
Benfarhi Louiza ◽  
Azoui Boubekeur
Keyword(s):  
Low Voltage ◽  
Voltage Drop ◽  
Electrical Energy ◽  
Utilization Rate ◽  
Photovoltaic Systems ◽  
Voltage Distribution ◽  
Medium Voltage ◽  
Pv Systems ◽  
Transformer Substation ◽  
Load Pattern

Background: The improvement of the voltage in power lines and the respect of the low voltage distribution transformer substations constraints (Transformer utilization rate and Voltage drop) are possible by several means: reinforcement of conductor sections, installation of new MV / LV substations (Medium Voltage (MV), Low Voltage (LV)), etc. Methods: Connection of mini-photovoltaic systems (PV) to the network, or to consumers in underserved areas, is a well-adopted solution to solve the problem of voltage drop and lighten the substation transformer, and at the same time provide clean electrical energy. PV systems can therefore contribute to this solution since they produce energy at the deficit site. Results: This paper presents the improvement of transformer substation constraints, supplying an end of low voltage electrical line, by inserting photovoltaic systems at underserved subscribers. Conclusion: This study is applied to a typical load pattern, specified to the consumers region.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

scholarly journals Dynamic Low Voltage Ride through Detection and Mitigation in Brushless Doubly Fed Induction Generators

Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4461
Author(s):  
Ahsanullah Memon ◽  
Mohd Wazir Mustafa ◽  
Muhammad Naveed Aman ◽  
Mukhtar Ullah ◽  
Tariq Kamal ◽  
...  
Keyword(s):  
Fuzzy Logic ◽  
Fuzzy Logic Controller ◽  
Low Voltage ◽  
Voltage Drop ◽  
Low Voltage Ride Through ◽  
Induction Generators ◽  
Doubly Fed Induction Generators ◽  
Reactive Current ◽  
Doubly Fed ◽  
Rotor Side Converter

Brushless doubly-fed induction generators have higher reliability, making them an attractive choice for not only offshore applications but also for remote locations. These machines are composed of two back-to-back voltage source converters: the grid side converter and the rotor side converter. The rotor side converter is typically used for reactive current control of the power winding using the control winding current. A low voltage ride through (LVRT) fault is detected using a hysterisis comparison of the power winding voltage. This approach leads to two problems, firstly, the use of only voltage to detect faults results in erroneous or slow response, and secondly, sub-optimal control of voltage drop because of static reference values for reactive current compensation. This paper solves these problems by using an analytical model of the voltage drop caused by a short circuit. Moreover, using a fuzzy logic controller, the proposed technique employs the voltage frequency in addition to the power winding voltage magnitude to detect LVRT conditions. The analytical model helps in reducing the power winding voltage drop while the fuzzy logic controller leads to better and faster detection of faults, leading to an overall faster response of the system. Simulations in Matlab/Simulink show that the proposed technique can reduce the voltage drop by up to 0.12 p.u. and result in significantly lower transients in the power winding voltage as compared to existing techniques.

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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