Optimization of indium bump preparation in infrared focal plane array fabrication

2014 ◽  
Author(s):  
Zhijin Hou ◽  
Junjie Si ◽  
Wei Wang ◽  
Haizhen Wang ◽  
Liwen Wang
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Array Fabrication

Design rule of indium bump in infrared focal plane array for longer cycling life

2016 ◽  
Vol 76 ◽  
pp. 631-635 ◽  
Author(s):  
Xiaoling Zhang ◽  
Chao Meng ◽  
Wei Zhang ◽  
Yanqiu Lv ◽  
Junjie Si ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Design Rule ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Cycling Life

The study of selective heating of indium bump in MCT infrared focal plane array

2012 ◽  
Author(s):  
Haiyan Zhang ◽  
Lan Cao ◽  
Fulong Zhuang ◽  
Xiaoning Hu ◽  
Haimei Gong
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Infrared Focal Plane Array ◽  
Selective Heating ◽  
Indium Bump

Finite Element Analysis on Structural Stress of 8×8 InSb Infrared Focal Plane Array

2010 ◽  
Vol 34-35 ◽  
pp. 207-211 ◽  
Author(s):  
Qing Duan Meng ◽  
Xiao Ling Zhang ◽  
Xiao Lei Zhang ◽  
Wei Guo Sun
Keyword(s):  
Finite Element ◽  
Focal Plane ◽  
Maximum Stress ◽  
Focal Plane Array ◽  
Von Mises Stress ◽  
Design Parameters ◽  
Structural Stress ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Von Mises

Based on viscoplastic Anand’s model, the structural stress of 8×8 InSb infrared focal plane array (IRFPA) detector is systemically analyzed by finite element method, and the impacts of design parameters including indium bump diameters, heights and InSb chip thicknesses on both von Mises stress and its distribution are discussed in this manuscript. Simulation results show that as the diameters of indium bump decreases from 36 μm to 24 μm in step of 2 μm, the maximum stress existing in InSb chip reduces first, increases then linearly with reduced indium bump diameters, and reaches minimum with indium bump diameter 30 μm, the stress distribution at the contacts areas is uniform and concentrated. Furthermore, the varied tendency has nothing to do with indium bump standoff height. With indium bump diameter 30 μm, as the thickness of InSb chip reduces from 21 μm to 9 μm in step of 3 μm, the varying tendency of the maximum stress value in InSb chip is just like the letter U, as the indium bump thickness decreases also from 21 μm to 6 μm in step of 3 μm, the maximum stress in 8×8 InSb IRPFA decreases from 260 MPa to 102 MPa, which is the smallest von Mises stress value obtained with the indium diameter 30 μm, thickness 9 μm and InSb thickness 12 μm.

Finite Element Analysis on Structural Stress of Large Format InSb Infrared Focal Plane Array

2010 ◽  
Vol 152-153 ◽  
pp. 1721-1725 ◽  
Author(s):  
Qing Duan Meng ◽  
Qing Song Lin ◽  
Xiao Lei Zhang ◽  
Wei Guo Sun
Keyword(s):  
Finite Element ◽  
Stress Distribution ◽  
Focal Plane ◽  
Focal Plane Array ◽  
Von Mises Stress ◽  
Bottom Surface ◽  
Element Analysis ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Von Mises

Two-step method is used to research stress and its distribution in 64×64 InSb infrared focal plane array (IRFPA) employing finite element method. First, a small 8×8 InSb IRFPA is studied by changing indium bump diameters from 24μm to 36μm, with indium bump thickness 20μm and InSb thickness 10μm, the simulated results show that von Mises stress in InSb chip is dependent on indium bump diameters, the varying tendency is just like the letter V, here when indium bump diameters is set to 30μm, the smallest von Mises stress is achieved and its distribution in InSb chip is uniform at contacting areas. Then, InSb IRFPA array scale is doubled once again from 8×8 to 64×64 to learn the effect from array size, thus, the stress and its distribution of 64×64 InSb IRFPA is obtained in a short time. Simulation results show that von Mises stress maximum in InSb chip and Si readout integrated circuit almost do not increases with array scale, and the largest von Mises stress is located in InSb chips. Besides, stress distribution on the bottom surface of InSb chip is radiating, and decreases from core to four corners, and stress value at contacting area is smaller than those on its surrounding areas, contrary to stress distribution on top surface of InSb chip.

Finite Element Analysis on Structural Stress of 8×8 Infrared Focal Plane Array Integrating with Microlens Arrays

2012 ◽  
Vol 442 ◽  
pp. 162-166
Author(s):  
Li Wen Zhang ◽  
Ming Shao ◽  
Qiang Yu ◽  
Peng Fei Li
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Focal Plane ◽  
Maximum Stress ◽  
Focal Plane Array ◽  
Structural Stress ◽  
Element Analysis ◽  
Microlens Arrays ◽  
Infrared Focal Plane Array ◽  
Indium Bump

Based on finite element analysis, the structural stress of 8×8 InSb Infrared Focal Plane Array integrating with microlens arrays dependent on indium bump sizes is systemically researched. Simulation results show that as the diameters of indium bump increase from 16μm to 38μm in step of 2μm, the maximum stress existing in InSb chip first reduces, then increases, and reaches minimum with indium bump diameter 32μm. Yet the maximum stress in the indium bump array is almost unchangeable and keeps at 16.5MPa. The maximum stress in Si readout integrated circuit almost half stress in InSb chip. Besides, the stress appearing on those regions situating just on microlens array is much smaller than its surrounding regions, and the stress distribution is uniform at contacting areas between InSb chip and indium bump.

Study on defective elements from indium bump preparation in focal plane array fabrication

2016 ◽  
Author(s):  
Zhijin Hou ◽  
Li Fu ◽  
Junjie Si ◽  
Wei Wang ◽  
Yanqiu Lv ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Indium Bump ◽  
Array Fabrication

Structural Stress Analysis of 16×16 InSb Infrared Focal Plane Array with Underfill

2011 ◽  
Vol 121-126 ◽  
pp. 4320-4324
Author(s):  
Qian Yu ◽  
Li Wen Zhang ◽  
Qing Duan Meng
Keyword(s):  
Integrated Circuits ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Fracture Probability ◽  
Von Mises Stress ◽  
Array Detector ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Von Mises

To reduce the fracture probability of InSb infrared detector in thermal shock from room temperature to 77K, for 16×16 mesa structure InSb infrared focal plane array detector with underfill, here ANSYS, is employed to research the impacts from both indium bump diameters and heights on both Von Mises stress and its distribution. Simulation results show that when the diameters of indium bump increases from 20µm to 36µm in step of 4µm, the maximal Von Mises stress in the InSb chip increases slowly. Besides, when the height of indium bump increases from 8μm to 24μm in step of 8μm, the maximal Von Mises stress in the InSb chip reduces from 1200MPa to 1030MPa. Von Mises stress of Si readout integrated circuits is also much smaller than that of InSb chip.

Finite Element Analysis on Structural Stress of 8×8 InSb Infrared Focal Plane Array with Underfill

2011 ◽  
Vol 201-203 ◽  
pp. 108-112
Author(s):  
Qing Duan Meng ◽  
Li Gong Sun ◽  
Jie Xin Pu
Keyword(s):  
Finite Element ◽  
Focal Plane ◽  
Chip Thickness ◽  
Focal Plane Array ◽  
Von Mises Stress ◽  
Structural Stress ◽  
Infrared Focal Plane Array ◽  
Bump Height ◽  
Indium Bump ◽  
Von Mises

Based on viscoplastic Anand’s model, the structural stress of 8×8 InSb infrared focal plane array (IRFPA) detector is systemically analyzed by finite element method, and the impacts of design parameters including indium bump diameters, heights and InSb chip thicknesses on both Von Mises stress and its distribution are discussed in this manuscript. Simulation results show that the maximum stress existing in InSb chip reaches minimum with indium bump diameter 32μm. Under this condition, for the fixed indium height, as the InSb chip thickness reduces from 21µm to 9µm in step of 3µm, Von Mises stress maximum values of InSb chip seems increases gradually, and when the indium bump height reduces from 21µm to 9µm in step of 3µm, its maximum Von Mises stress increase at random increment, do not show certain rules, and indium bump height seems to have a comparable effect on stress value with InSb chip thickness. When indium diameter, height and InSb chip thickness are set to 32µm, 15µm, and 12µm, respectively, the maximal Von Mises value existing in InSb chip reaches minimal value 628MPa, simultaneously the stress distribution at the contacts areas is uniform and concentrated, and this structure is promising to avoid device invalidation.

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