First-principles study on the effects of the intrinsic defects in GaAs saturable absorber

2014 ◽  
Author(s):  
Xiaoyang Ma ◽  
Dechun Li ◽  
Shengzhi Zhao ◽  
Wen Cong ◽  
Guiqiu Li ◽  
...  
2017 ◽  
Vol 140 ◽  
pp. 39-45 ◽  
Author(s):  
Mardochee Reveil ◽  
Jingyang Wang ◽  
Michael O. Thompson ◽  
Paulette Clancy

2020 ◽  
Vol 127 (8) ◽  
pp. 085702 ◽  
Author(s):  
Xiaolan Yan ◽  
Pei Li ◽  
Lei Kang ◽  
Su-Huai Wei ◽  
Bing Huang

2019 ◽  
Vol 150 (9) ◽  
pp. 094704 ◽  
Author(s):  
Q. L. Lin ◽  
G. P. Li ◽  
N. N. Xu ◽  
H. Liu ◽  
D. J. E ◽  
...  

2015 ◽  
Vol 27 (11) ◽  
pp. 4232-4234
Author(s):  
Xiaoqiu Wang ◽  
Baoling Wang ◽  
Qinfang Zhang

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27612-27618 ◽  
Author(s):  
Yucheng Huang ◽  
Chan Wang ◽  
Xi Chen ◽  
Danmei Zhou ◽  
Jinyan Du ◽  
...  

Sn vacancies can work as an effective source for p-type conduction under both Sn- and Se-rich conditions while n-type conduction is unlikely to be realized due to the absence of the effective intrinsic source.


2020 ◽  
Vol 128 (18) ◽  
pp. 183904
Author(s):  
ShiJie Tan ◽  
Wei Zhang ◽  
Lu Yang ◽  
Jinsong Chen ◽  
Zhiguo Wang

2018 ◽  
Vol 20 (10) ◽  
pp. 6800-6804 ◽  
Author(s):  
Na Liu ◽  
ChiYung Yam

Based on first-principles calculations, the intrinsic defects in FAPbI3 are investigated systematically. It is found that antisites FAI and IFA create deep levels in the band gap which can act as recombination centers.


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