Hydrogenated amorphous silicon speed sensor based on the flying spot technique

1995 ◽  
Author(s):  
Manuela Vieira ◽  
Alessandro Fantoni ◽  
A. Felipe Macarico ◽  
Fernando Soares ◽  
Rodrigo Martins
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Speed Sensor ◽  
Hydrogenated Amorphous ◽  
Flying Spot

Hydrogenated Amorphous Silicon Speed Sensor Based on the Flying Spot Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
M. Vieira ◽  
A. Fantoni ◽  
A. Maçarico ◽  
F. Soares ◽  
G. Evans ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Material Characterization ◽  
Diffusion Length ◽  
Hydrogenated Amorphous Silicon ◽  
Effective Lifetime ◽  
Object Position ◽  
The Past ◽  
Speed Sensor ◽  
Hydrogenated Amorphous ◽  
Flying Spot

ABSTRACTIn the past we have developed a transient technique, called the Flying Spot Technique (FST). FST allows, not only to infer the ambipolar diffusion length but also the effective lifetime of the photogenerated carriers once the light spot velocity and geometry of the structure were known.In this paper, we propose to apply this technique backwards in order to detect the path and velocity of an object that is moving in the direction of a light source. The light reflected back from the object is analyzed through a p.i.n structure being the transient transverse photovoltage dependent on the movement of the object (position and velocity). Assuming that the transport properties of the material and the geometry of the device are known and using a triangulation method we show that it is possible to map the movement of the object. Details concerning material characterization, simulation and device geometry are presented.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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