Laser processing and in-situ diagnostics for crystallization: from thin films to nanostructures

2014 ◽  
Author(s):  
Jae-Hyuck Yoo ◽  
Jung Bin In ◽  
Andy Cheng Zheng ◽  
Sang-Gil Ryu ◽  
David J. Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Processing ◽  
In Situ Diagnostics

scholarly journals Ultrafast laser processing of transparent materials supported by in-situ diagnostics

2021 ◽  
Author(s):  
Malte Kumkar ◽  
Myriam Kaiser ◽  
Jonas Kleiner ◽  
Daniel Günther Grossmann ◽  
Daniel Flamm ◽  
...  
Keyword(s):  
Laser Processing ◽  
Bulk Material ◽  
Ultrafast Laser ◽  
Rear Side ◽  
Laser Etching ◽  
Pump Probe ◽  
Transient Stress ◽  
Transparent Materials ◽  
In Situ Diagnostics

For the development of industrial NIR ultrafast laser processing of transparent materials, the absorption inside the bulk material has to be controlled. Applications we aim for are front and rear side ablation, drilling and inscription of modifications for cleaving and selective laser etching of glass and sapphire in sheet geometry. We applied pump probe technology and in situ stress birefringence microscopy for fundamental studies on the influence of energy and duration (100 fs – 20 ps), temporal and spatial spacing, focusing and beam shaping of the laser pulses. Applying pump probe technique we are able to visualize differences of spatio-temporal build up of absorption, self focusing, shock wave generation for standard, multispot and beam shaped focusing. Incubation effects and disturbance of beam propagation due to modifications or ablation can be observed. In-situ imaging of stress birefringence gained insight in transient build up of stress with and without translation. The results achieved so far, demonstrate that transient stress has to be taken into account in scaling the laser machining throughput of brittle materials. Furthermore it points out that transient stress birefringence is a good indicator for accumulation effects, supporting tailored processing strategies.Cutting results achieved for selective laser etching by single pass laser modification exemplifies the benefits of process development supported by in situ diagnostics.

scholarly journals Ultrafast laser processing of transparent materials supported by in-situ diagnostics

2016 ◽  
Author(s):  
M. Kumkar ◽  
M. Kaiser ◽  
J. Kleiner ◽  
D. Grossmann ◽  
D. Flamm ◽  
...  
Keyword(s):  
Laser Processing ◽  
Ultrafast Laser ◽  
Transparent Materials ◽  
In Situ Diagnostics

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

MOCVD and properties of in situ doped Pt-SnO2 thin films

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-643-Pr8-650 ◽  
Author(s):  
M. Amjoud ◽  
F. Maury
Keyword(s):  
Thin Films ◽  
Sno2 Thin Films
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