Planar laser-induced fluorescence imaging of Si and SiO during pulsed laser ablation of Si

Author(s):  
Phillip H. Paul ◽  
Dale L. Capewell ◽  
David G. Goodwin
1995 ◽  
Vol 388 ◽  
Author(s):  
D. G. Goodwin ◽  
D. L. Capewell ◽  
P. H. Paul

AbstractPlanar laser-induced fluorescence has been used to acquire time sequence images of ground-state, neutral Si and SiO during laser ablation of an Si target in vacuum and in the presence of a background gas at a fluence of 3-4 J/cm2. the SiO images, taken in air, strongly suggest that the observed SiO is created through reaction of silicon with oxygen at the contact front as the plume expands.


1998 ◽  
Vol 27 (2) ◽  
pp. 2069-2076 ◽  
Author(s):  
David F. Marran ◽  
Marshall B. Long ◽  
William M. Studzinski ◽  
J. Christian Swindal ◽  
William P. Acker

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