Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

2014 ◽  
Author(s):  
M. Bär ◽  
D. E. Starr ◽  
A. Lambertz ◽  
B. Holländer ◽  
J.-H. Alsmeier ◽  
...  
2007 ◽  
Vol 989 ◽  
Author(s):  
Kobsak Sriprapha ◽  
Ihsanul Afdi Yunaz ◽  
Shuichi Hiza ◽  
Kun Ho Ahn ◽  
Seung Yeop Myong ◽  
...  

AbstractThe temperature dependence of Si-based thin-film single junction solar cells on the phase of the intrinsic absorber is investigated in order to find the optimal absorber at high operating temperatures. For comparison, hydrogenated amorphous, protocrystalline, and microcrystalline silicon solar cells are fabricated by plasma-enhanced chemical vapor deposition and hot-wired CVD techniques. Photo J-V characteristics are measured using a solar simulator at the ambient temperature range of 25-85°C. It is found that the cells with a higher open-circuit voltage usually show lower temperature-dependent behaviors; the protocrystalline silicon solar cells provide the lowest temperature coefficient of efficiency, while the microcrystalline silicon solar cells are highly sensitive to the temperature. Therefore, protocrystalline silicon solar cells are promising for use in high temperature regions.


2000 ◽  
Vol 609 ◽  
Author(s):  
S.J. Jones ◽  
R. Crucet ◽  
X. Deng ◽  
D.L. Williamson ◽  
M. Izu

ABSTRACTA Gas Jet technique has been used to prepare microcrystalline silicon (μc-Si) thin films at deposition rates as high as 20 Å/s. The films have microcrystal sizes between 80 and 120 Å with a heterogeneous microstructure containing regions with columnar growth and other regions with a more randomly oriented microstructure. These materials have been used as i-layers for nip single-junction solar cells. The high deposition rates allow for fabrication of the required thicker μc-Si i-layers in a similar amount of time to those used for high quality a-SiGe:H i-layers (rates of 1-3 Å/s). Using a 610nm cutoff filter which only allows red light to strike the device, pre-light soaked short circuit currents of 8-10 mA/cm2 and 2.7% red-light efficiencies have been obtained while AM1.5 white light efficiencies are above 7%. These efficiencies are higher than those typically obtained for μc-Si cells prepared at the high i-layer growth rates using other deposition techniques. After 1000 h. of light soaking, the efficiencies on average degrade only by 2-5% (stabilized efficiencies of 2.6%) consistent with the expected high stability with the microcrystalline materials. The small amount of degradation compares with the 15-17% degradation in efficiencies for a-SiGe:H cells subjected to similar irradiation treatments (final light-soaked red light efficiencies of 3.2%). Improvements in the cell efficiencies may come through an understanding of the role that columnar microstructure and void structure plays in determining the device performance.


1996 ◽  
Vol 69 (27) ◽  
pp. 4224-4226 ◽  
Author(s):  
G. Ganguly ◽  
T. Ikeda ◽  
T. Nishimiya ◽  
K. Saitoh ◽  
M. Kondo ◽  
...  

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3054-3060 ◽  
Author(s):  
J. Hüpkes ◽  
B. Rech ◽  
O. Kluth ◽  
T. Repmann ◽  
B. Zwaygardt ◽  
...  

Author(s):  
Venkatesh Piradi ◽  
Feng Yan ◽  
Xunjin Zhu ◽  
Wai-Yeung Raymond Wong

Organic solar cells (OSCs) have been considered as a promising cost-effective alternative to silicon-based solar cell counterparts due to their lightweight, mechanical flexibility, and easy fabrication features. Over the past...


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