Design and fabrication of high power single mode double-trench ridge waveguide laser

2014 ◽  
Author(s):  
Shaoyang Tan ◽  
Teng Zhai ◽  
Wei Wang ◽  
Ruikang Zhang ◽  
Dan Lu ◽  
...  
Keyword(s):  
High Power ◽  
Single Mode ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

scholarly journals InGaAsP/InP Buried-Ridge Waveguide Laser with Improved Lateral Single-Mode Property

ETRI Journal ◽  
2008 ◽  
Vol 30 (3) ◽  
pp. 480-482 ◽  
Author(s):  
Su Hwan Oh ◽  
Ki Soo Kim ◽  
Oh Kee Kwon ◽  
Kwang Ryong Oh
Keyword(s):  
Single Mode ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Coherent kinks in high-power ridge waveguide laser diodes

2006 ◽  
Vol 24 (5) ◽  
pp. 2225-2232 ◽  
Author(s):  
M. Achtenhagen ◽  
A.A. Hardy ◽  
C.S. Harder
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Multichamber Rie Processing for Ingaasp Ridge Waveguide Laser Arrays

1991 ◽  
Vol 240 ◽  
Author(s):  
Mark A. Rothman ◽  
John A. Thompson ◽  
Craig A. Armiento
Keyword(s):  
Optoelectronic Devices ◽  
Single Mode ◽  
Ridge Waveguide ◽  
Cross Contamination ◽  
Waveguide Laser ◽  
Laser Arrays ◽  
Monolithically Integrated ◽  
High Degree ◽  
Passive Alignment ◽  
Ridge Waveguide Laser

ABSTRACTThe fabrication of devices based on III-V materials often requires a number of different reactive ion etching (RIE) processes that must be implemented sequentially. These processes are typically carried out in different RIE systems to avoid cross contamination. In this paper, we describe a multichamber RIE system configured to provide several sequential etch processes required for the fabrication of optoelectronic devices. This system has been used to fabricate InGaAsP/lnP ridge waveguide laser arrays with etched mechanical features that enable passive alignment of the lasers with single-mode fibers. Laser arrays with threshold currents as low as 20 mA have been processed with a high degree of uniformity. This system has also been used to develop a laser facet etch process based on CH4/H2/Ar chemistry. This process has been used to fabricate lasers with monolithically integrated rear facet monitors. These etched facet lasers have threshold currents comparable to lasers with both facets cleaved.

High-power 980-nm ridge waveguide laser diodes including an asymmetrically expanded optical field normal to the active layer

2002 ◽  
Vol 38 (8) ◽  
pp. 1081-1088 ◽  
Author(s):  
K.I. Shigihara ◽  
K. Kawasaki ◽  
Y. Yoshida ◽  
S. Yamamura ◽  
T. Yagi ◽  
...  
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Optical Field ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Reliable, high-power, singlemode, 630–640 nm Ga0.5In0.5P/GaAlInP ridge waveguide laser diodes

1993 ◽  
Vol 29 (2) ◽  
pp. 233 ◽  
Author(s):  
S.S. Ou ◽  
M. Jansen ◽  
J.J. Yang ◽  
R.J. Fu ◽  
C.J. Hwang
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Erratum: Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

1980 ◽  
Vol 16 (2) ◽  
pp. 75
Author(s):  
I.P. Kaminow ◽  
R.E. Nahory ◽  
M.A. Pollack ◽  
L.W. Stulz ◽  
J.C. Dewinter
Keyword(s):  
Single Mode ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Reliable High-Power InGaAs/AIGaAs Ridge Waveguide Laser Diodes

2005 ◽  
Author(s):  
G. Beister ◽  
F. Bugge ◽  
G. Erbert ◽  
J. Maege ◽  
P. Ressel ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

1979 ◽  
Vol 15 (23) ◽  
pp. 763 ◽  
Author(s):  
I.P. Kaminow ◽  
R.E. Nahory ◽  
M.A. Pollack ◽  
L.W. Stulz ◽  
J.C. Dewinter
Keyword(s):  
Single Mode ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser
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