Electrical characteristics of AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodes irradiated with protons

2014 ◽  
Author(s):  
Yongkun Sin ◽  
Nathan Presser ◽  
Brendan Foran ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Diodes ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Vytautas Jakštas ◽  
Justinas Jorudas ◽  
Vytautas Janonis ◽  
Linas Minkevičius ◽  
Irmantas Kašalynas ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Steady Current ◽  
Improved Performance

This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices demonstrate an improved performance in comparison with the ones processed on a sapphire substrate. Both the SDs and HEMTs show much smaller leakage current density and a higher ION/IOFF ratio, reaching values down to 3.0±1.2 mA/cm2 and up to 70 dB under the reverse electric field of 340 kV/cm, respectively. The higher thermal conductivity of the SiC substrate leads to the increase of steady current and transconductance, and better thermal management of the HEMT devices. In addition, a successful detection of terahertz (THz) waves with the AlGaN/GaN HEMT is demonstrated at room temperature. These results open further routes for the optimization of THz designs which may result in development of novel plasmonic THz devices.

scholarly journals High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 509
Author(s):  
Yu-Chun Huang ◽  
Hsien-Chin Chiu ◽  
Hsuan-Ling Kao ◽  
Hsiang-Chun Wang ◽  
Chia-Hao Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Heat Removal ◽  
High Electron Mobility Transistors ◽  
Thermal Dissipation ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility ◽  
Low Resistivity ◽  
Electron Mobility Transistors ◽  
Gan Hemts

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate.

Schottky diodes and high electron mobility transistors of 2DEG AlGaN/GaN structures on sapphire substrate

2015 ◽  
Vol 54 (4) ◽  
Author(s):  
Vytautas Jakštas ◽  
Irmantas Kašalynas ◽  
Irena Šimkienė ◽  
Viktorija Strazdienė ◽  
Pawel Prystawko ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Electron Mobility ◽  
Schottky Diodes ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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