Short-pulse mid- and far-infrared gas lasers and their applications

1995 ◽  
Author(s):  
Damien P. Scherrer ◽  
Joachim Knittel ◽  
Dominique B. Moix ◽  
M. Baumgartner ◽  
Fritz K. Kneubuehl
Keyword(s):  
Short Pulse ◽  
Far Infrared ◽  
Gas Lasers

Recent Aspects of Ultra Short Pulse Mid- And Far-Infrared Gas Lasers And Their Applications

1996 ◽  
pp. 273-278 ◽  
Author(s):  
D. P. Scherrer ◽  
J. Knittel ◽  
D. B. Moix ◽  
M. Baumgartner ◽  
F. K. Kneubuehl
Keyword(s):  
Short Pulse ◽  
Far Infrared ◽  
Gas Lasers ◽  
Ultra Short Pulse

Modern aspects of far-infrared gas lasers

1993 ◽  
Vol 77 (1) ◽  
pp. 35-40 ◽  
Author(s):  
F. K. Kneubühl ◽  
D. P. Scherrer ◽  
D. B. Moix
Keyword(s):  
Far Infrared ◽  
Gas Lasers

Athermal Annealing of Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
J. Grun ◽  
C.K. Manka ◽  
C. A. Hoffman ◽  
J. R. Meyer ◽  
O. J. Glembocki ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Laser Annealing ◽  
Short Pulse ◽  
Mechanical Energy ◽  
Far Infrared ◽  
Electrical Activation ◽  
Silicon Sample ◽  
Pulsed Laser Annealing ◽  
Surface Spot ◽  
Silicon Doped

AbstractWe experimentally demonstrate the annealing and electrical activation of doped silicon without the direct application of heat as in conventional thermal annealing or pulsed laser annealing. 25 × 25 × 3 mm samples of silicon doped by neutron transmutation were irradiated with a short pulse from a 1.06-micron laser. The few joule laser pulse was focused to mm-diameter surface spot which resulted in high power (∼ 1011W/cm2) capable of launching shocks into the entire sample. In a few instances the entire silicon slab, including regionsfar outside the illuminated spot, was annealed and electrically activated. In the annealed samples electrical activation of donors throughout the slab, measured with a four-point probe, was uniform and comparable to that of thermally annealed control samples. Far-infrared spectroscopy and Hall measurements also showed that the donor species was activated and Raman spectroscopy demonstrated marked improvement in the crystal structure. We conjecture that the annealing was caused by the mechanical energy that was launched into the slab by the laser pulse. Results of experiments on an ion-implanted silicon sample are also discussed.

Pulsed high-power far-infrared gas lasers: Performance and spectral survey

1987 ◽  
Vol 23 (4) ◽  
pp. 377-384 ◽  
Author(s):  
C. Gross ◽  
J. Kiess ◽  
A. Mayer ◽  
F. Keilmann
Keyword(s):  
High Power ◽  
Far Infrared ◽  
Gas Lasers ◽  
Spectral Survey
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