Electron and hole tunneling transfer times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells under electric field

1990 ◽  
Author(s):  
Masaaki Nido ◽  
M. G. Alexander ◽  
Wolfgang W. Ruehle ◽  
Klaus Koehler
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Double Quantum ◽  
Tunneling Transfer ◽  
Transfer Times ◽  
Asymmetric Double Quantum Wells

BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250172 ◽  
Author(s):  
JUN ZHU ◽  
SHI LIANG BAN ◽  
SI HUA HA
Keyword(s):  
Variational Method ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Field Effect ◽  
Binding Energies ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Material Parameters ◽  
Asymmetric Double Quantum Wells

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN / Al x Ga 1-x N asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison.

scholarly journals Asymmetric double quantum wells with smoothed interfaces

Open Physics ◽  
2012 ◽  
Vol 10 (2) ◽  
Author(s):  
Vladimir Gavryushin
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
External Electric Field ◽  
Energy Levels ◽  
Double Quantum ◽  
Inverse Population ◽  
Double Quantum Well ◽  
The One ◽  
Interface Disorder ◽  
Asymmetric Double Quantum Wells

AbstractWe have derived and analyzed the wavefunctions and energy states for an asymmetric double quantum well (ADQW), broadened due to interdiffusion or other static interface disorder effects, within a known discreet variable representative approach for solving the one-dimensional Schrodinger equation. The main advantage of this approach is that it yields the energy eigenvalues, and the eigenvectors, in semiconductor nanostructures of different shapes as well as the strengths of the optical transitions between them. The behaviour of ADQW states for the different mutual widths of coupled wells, for the different degree of broadening, and under increasing external electric field is investigated. We have found that interface broadening effects change and shift energy levels, not monotonously, but the resonant conditions near an energy of sub-band coupling regions do not strongly distort. Also, it is shown that an external electric field may help to achieve resonant conditions for inter-sub-band inverse population by intrawell emission of LO-phonons in diffuse ADQW.

Resonant-tunneling transfer times between asymmetric GaAs/Al0.35Ga0.65As double quantum wells

1990 ◽  
Vol 41 (17) ◽  
pp. 12295-12298 ◽  
Author(s):  
M. G. W. Alexander ◽  
M. Nido ◽  
W. W. Rühle ◽  
K. Köhler
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Quantum ◽  
Tunneling Transfer ◽  
Transfer Times

Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells

1990 ◽  
Vol 56 (4) ◽  
pp. 355-357 ◽  
Author(s):  
M. Nido ◽  
M. G. W. Alexander ◽  
W. W. Rühle ◽  
T. Schweizer ◽  
K. Köhler
Keyword(s):  
Quantum Wells ◽  
Double Quantum ◽  
Tunneling Times ◽  
Asymmetric Double Quantum Wells
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