scholarly journals Optical tweezers for precise control of micro-bubble arrays: in situ temperature measurement

Author(s):  
Tristan M. Burns ◽  
Daryl Preece ◽  
Timo A. Niemenen ◽  
Haliina Rubinsztein-Dunlop
2016 ◽  
Vol 18 (37) ◽  
pp. 25823-25830 ◽  
Author(s):  
Dipankar Mondal ◽  
Paresh Mathur ◽  
Debabrata Goswami

We present a novel method of microrheology based on femtosecond optical tweezers, which in turn enables us to directly measure and controlin situtemperature at microscale volumes at the solid–liquid interface.


2017 ◽  
Vol 5 (27) ◽  
pp. 6718-6728 ◽  
Author(s):  
Subhrokoli Ghosh ◽  
Santu Das ◽  
Shuvojit Paul ◽  
Preethi Thomas ◽  
Basudev Roy ◽  
...  

We use micro-bubble based thermo-optical tweezers to simultaneously synthesize, dope, and pattern conducting polymers to obtain unprecedented conductivity values.


2011 ◽  
Vol 679-680 ◽  
pp. 777-780 ◽  
Author(s):  
Shoji Ushio ◽  
Ayumu Adachi ◽  
Kazuhiro Matsuda ◽  
Noboru Ohtani ◽  
Tadaaki Kaneko

As a new graphene functionality applicable to post-implantation high temperature annealing of SiC, a method of in situ formation and removal of large area epitaxial few-layer graphene on 4H-SiC(0001) Si-face is proposed. It is demonstrated that the homogeneous graphene layer formed by Si sublimation can be preserved without the decomposition of the underlying SiC substrate even in the excess of 2000 oC in ultrahigh vacuum. It is due to the existence of the stable (6√3×6√3) buffer layer at the interface. To ensure this cap function, the homogeneity of the interface must be guaranteed. In order to do that, precise control of the initial SiC surface flatness is required. Si-vapor etching is a simple and versatile SiC surface pre/post- treatment method, where thermally decomposed SiC surface is compensated by a Si-vapor flux from Si solid source in the same semi-closed TaC container. While this Si-vapor etching allows precise control of SiC etch depth and surface step-terrace structures, it also provides a “decap” function to remove of the graphene layer. The surface properties after the each process were characterized by AFM and Raman spectroscopy.


2022 ◽  
Vol 43 (3) ◽  
Author(s):  
Jonathan Pearce ◽  
Declan Tucker ◽  
Carmen García Izquierdo ◽  
Raul Caballero ◽  
Trevor Ford ◽  
...  

AbstractMineral insulated, metal sheathed (MI) Type K and Type N thermocouples are widely used in industry for process monitoring and control. One factor that limits their accuracy is the dramatic decrease in the insulation resistance at temperatures above about 600 °C which results in temperature measurement errors due to electrical shunting. In this work the insulation resistance of a cohort of representative MI thermocouples was characterised at temperatures up to 1160 °C, with simultaneous measurements of the error in indicated temperature by in situ comparison with a reference Type R thermocouple. Intriguingly, there appears to be a systematic relationship between the insulation resistance and the error in the indicated temperature. At a given temperature, as the insulation resistance decreases, there is a corresponding increasingly negative error in the temperature measurement. Although the measurements have a relatively large uncertainty (up to about 1 °C in temperature error and up to about 10 % in insulation resistance measurement), the trend is apparent at all temperatures above 600 °C, which suggests that it is real. Furthermore, the correlation disappears at temperatures below about 600 °C, which is consistent with the well-established diminution of insulation resistance breakdown effects below that temperature. This raises the intriguing possibility of using the as-new MI thermocouple calibration as an indicator of insulation resistance breakdown: large deviations of the electromotive force (emf) in the negative direction could indicate a correspondingly low insulation resistance.


CLEO: 2013 ◽  
2013 ◽  
Author(s):  
Jonathan Mueller ◽  
Joachim Fischer ◽  
Yatin Jadavji Mange ◽  
Thomas Nann ◽  
Martin Wegener

2012 ◽  
Vol 445 ◽  
pp. 207-212
Author(s):  
Peter Demmel ◽  
Martin Hirsch ◽  
Roland Golle ◽  
Hartmut Hoffmann

2020 ◽  
Vol 314 ◽  
pp. 112266
Author(s):  
Ranjana Seema ◽  
Soumen Mandal ◽  
Preeti Singh ◽  
Souvik Paul ◽  
Nripen Chanda

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