A systematic approach to interpreting Hanle spin precession data in non-local spin valves

Author(s):  
Adrian G. Swartz ◽  
Kathleen M. McCreary ◽  
Wei Han ◽  
Hua Wen ◽  
Roland K. Kawakami
2015 ◽  
Vol 8 (12) ◽  
pp. 123003
Author(s):  
Satoshi Shirotori ◽  
Susumu Hashimoto ◽  
Masayuki Takagishi ◽  
Yuzo Kamiguchi ◽  
Hitoshi Iwasaki
Keyword(s):  

2007 ◽  
Vol 40 (5) ◽  
pp. 1280-1284 ◽  
Author(s):  
Y Ji ◽  
A Hoffmann ◽  
J S Jiang ◽  
J E Pearson ◽  
S D Bader

2017 ◽  
Vol 432 ◽  
pp. 291-295 ◽  
Author(s):  
Bing Zhao ◽  
Ziyu Zhang ◽  
Xiaobing Chen ◽  
Xiaohan Zhang ◽  
Jiahui Pan ◽  
...  

2017 ◽  
Vol 110 (22) ◽  
pp. 222407 ◽  
Author(s):  
J. D. Watts ◽  
J. S. Jeong ◽  
L. O'Brien ◽  
K. A. Mkhoyan ◽  
P. A. Crowell ◽  
...  

Carbon ◽  
2018 ◽  
Vol 131 ◽  
pp. 18-25 ◽  
Author(s):  
Adam L. Friedman ◽  
Kathleen M. McCreary ◽  
Jeremy T. Robinson ◽  
Olaf M.J. van 't Erve ◽  
Berend T. Jonker

2019 ◽  
Vol 114 (7) ◽  
pp. 072405 ◽  
Author(s):  
K. S. Das ◽  
F. K. Dejene ◽  
B. J. van Wees ◽  
I. J. Vera-Marun

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2879
Author(s):  
Amir Muhammad Afzal ◽  
Muhammad Farooq Khan ◽  
Jonghwa Eom

Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS2) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS2 vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS2 spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.


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