Dynamic measurement for the solution concentration variation using digital holographic interferometry and discussion for the measuring accuracy

2013 ◽  
Author(s):  
Jianlin Zhao ◽  
Yanyan Zhang ◽  
Hongzhen Jiang ◽  
Jianglei Di
Keyword(s):  
Holographic Interferometry ◽  
Solution Concentration ◽  
Dynamic Measurement ◽  
Concentration Variation ◽  
Measuring Accuracy

Visual and dynamic measurement of temperature fields by use of digital holographic interferometry

2013 ◽  
Author(s):  
Jianlin Zhao ◽  
Jianglei Di ◽  
Bingjing Wu ◽  
Jun Wang ◽  
Qian Wang ◽  
...  
Keyword(s):  
Holographic Interferometry ◽  
Dynamic Measurement ◽  
Temperature Fields

Pulsed digital holographic interferometry for dynamic measurement of rotating objects with an optical derotator

2001 ◽  
Vol 40 (28) ◽  
pp. 5106 ◽  
Author(s):  
Carlos Pérez-López ◽  
Fernando Mendoza Santoyo ◽  
Giancarlo Pedrini ◽  
Staffan Schedin ◽  
Hans J. Tiziani
Keyword(s):  
Holographic Interferometry ◽  
Dynamic Measurement ◽  
Rotating Objects

Research on FBG Temperature Sensing Network

2014 ◽  
Vol 716-717 ◽  
pp. 1391-1394
Author(s):  
Kai Xian Liu
Keyword(s):  
Numerical Simulation ◽  
Theoretical Analysis ◽  
Dynamic Measurement ◽  
Temperature Sensing ◽  
Large Space ◽  
Measuring Accuracy ◽  
Forming Temperature ◽  
Spatial Division Multiplexing ◽  
Temperature Dynamic

Research of FBG temperature sensing network base on WDM combined with spatial division multiplexing. Theoretical analysis and numerical simulation proves that the scheme is feasible, and the system has relatively higher measuring accuracy, which realizes the temperature dynamic measurement in large space, forming temperature sensing network.

Characterization of the solution concentration variation in microstructure by phase imaging

2020 ◽  
Vol 67 (5) ◽  
pp. 454-461
Author(s):  
Ying Ji ◽  
Shuang Fu ◽  
Mingming Zhang ◽  
Xiang Li ◽  
Yawei Wang
Keyword(s):  
Solution Concentration ◽  
Phase Imaging ◽  
Concentration Variation

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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