High-resistivity and high-TCR vanadium oxide thin films for infrared imaging prepared by bias target ion-beam deposition

Author(s):  
Yao Jin ◽  
Hitesh A. Basantani ◽  
Adem Ozcelik ◽  
Tom N. Jackson ◽  
Mark W. Horn
2016 ◽  
Author(s):  
P. Alvarez ◽  
D. I. C. Pearson ◽  
S. Pochon ◽  
O. Thomas ◽  
M. Cooke ◽  
...  

2011 ◽  
Author(s):  
Orlando M. Cabarcos ◽  
Hitesh A. Basantani ◽  
S. S. N. Bharadwaja ◽  
Jing Li ◽  
Bryan D. Gauntt ◽  
...  

2014 ◽  
Vol 1633 ◽  
pp. 87-92 ◽  
Author(s):  
M. Martyniuk ◽  
D. Baldwin ◽  
R. Jeffery ◽  
K.K.M.B.D. Silva ◽  
R.C. Woodward ◽  
...  

ABSTRACTWe report on the preparation and characterization of crystalline bismuth oxide thin films via Biased Target Ion Beam Deposition method. A focused blue laser (405nm) is used to write an array of dots in the bismuth oxide thin film and demonstrate clear and circular recording marks in form of “bubbles” or “little volcanos” (FWHM ∼500nm). Results indicate excellent static recording characteristics, writing sensitivity and contrast. The recording mechanism is investigated and is believed to be related to laser-induced morphology change.


2012 ◽  
Vol 730-732 ◽  
pp. 251-256
Author(s):  
Carlos Batista ◽  
Ricardo M. Ribeiro ◽  
Vasco Teixeira

Vanadium oxide thin films were deposited by reactive ion beam sputtering deposition onto glass substrates. The films were prepared by sputtering from a metallic vanadium target with an argon+oxygen ion beam in vacuum. Different processing conditions were evaluated with focus in obtaining monoclinic VO2(M) phase, which is known to exhibit a semiconducting-metal phase transition near room temperature. X-ray diffractometry (XRD) analyses revealed amorphous films for temperatures below 500°C. In crystalline films, the co-existence of VO2(M) with other phases was suppressed by pre-depositing a very thin metallic vanadium seeding layer which showed to promote the formation of single phase VO2(M) films. The VO2(M) films showed clearly the distinctive optical modulation behavior at the near-infrared range when going through the phase transition. The temperature dependence of sheet resistance supports the optical analyses revealing an evident semiconducting-metal behavior change up to over 2 orders of magnitude.


2019 ◽  
Vol 6 (7) ◽  
pp. 075707
Author(s):  
Tariq Nawaz ◽  
Waqar A A Syed ◽  
Ishaq Ahmad ◽  
Wiqar H Shah

Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.


Sign in / Sign up

Export Citation Format

Share Document