Time-resolved photoluminescence study of carrier recombination and transport in type-II superlattice infrared detector materials

Author(s):  
Blair C. Connelly ◽  
Grace D. Metcalfe ◽  
Hongen Shen ◽  
Michael Wraback
2011 ◽  
Vol 20 (03) ◽  
pp. 541-548
Author(s):  
BLAIR C. CONNELLY ◽  
GRACE D. METCALFE ◽  
PAUL H. SHEN ◽  
MICHAEL WRABACK

We report time-resolved photoluminescence measurements on a set of long-wave infrared InAs / GaSb type II superlattice absorber samples with various widths as a function of temperature and excitation density. Careful analysis of the photoluminescence data determines the minority carrier lifetime and background carrier density as a function of temperature, and provides information on the acceptor energy and density in each sample. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination with a lifetime of ~30 ns at 77 K for all samples. Below 40 K, background carriers are observed to freeze-out in conjunction with increased contributions from radiative recombination. An acceptor energy level of ~20 meV above the valance band is also determined for all samples. Variations of carrier lifetime between each sample do not strongly correlate with absorber width, indicating that barrier recombination is not the dominant factor limiting the carrier lifetime in our samples.


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pp. 093108 ◽  
Author(s):  
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A. B. Djurišić ◽  
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Yong Li ◽  
Xin-Jian Li

1996 ◽  
Vol 198 (1) ◽  
pp. 49-55 ◽  
Author(s):  
T. Kobayashi ◽  
M. Minaki ◽  
K. Takashima ◽  
K. Uchida ◽  
J. Nakahara

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  

Author(s):  
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Quang Phuong Le ◽  
Quang Liem Nguyen ◽  
Liang Li ◽  
Peter Reiss

2016 ◽  
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Robert Rehm ◽  
Volker Daumer ◽  
Tsvetelina Hugger ◽  
Norbert Kohn ◽  
Wolfgang Luppold ◽  
...  

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