Application of inorganic resists in high-density information storage technologies

1995 ◽  
Author(s):  
Ivan Z. Indutnyi ◽  
Sergey A. Kostyukevych ◽  
Victor I. Minko ◽  
Peter E. Shepeljavi ◽  
Alexander V. Stronski
Keyword(s):  
High Density ◽  
Information Storage ◽  
Storage Technologies

Photo-induced variation of magnetism in coordination polymers with ligand-based electron transfer

2021 ◽  
Author(s):  
Yan-Lei Lu ◽  
Wen-Long Lan ◽  
Wei Shi ◽  
Qionghua Jin ◽  
Peng Cheng
Keyword(s):  
Electron Transfer ◽  
Coordination Polymers ◽  
Optical Memory ◽  
High Density ◽  
Information Storage ◽  
Memory Devices ◽  
Storage Materials ◽  
Potential Applications ◽  
Induced Variation

Photo-induced variation of magnetism from ligand-based electron transfer have been extensively studied because of their potential applications in magneto-optical memory devices, light-responsive switches, and high-density information storage materials. In this...

ORGANIC SPINTRONICS: PAST, PRESENT AND FUTURE

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440013 ◽  
Author(s):  
XIAO-RONG LV ◽  
SHI-HENG LIANG ◽  
LING-LING TAO ◽  
XIU-FENG HAN
Keyword(s):  
Quantum Computing ◽  
Spin Injection ◽  
High Density ◽  
Information Storage ◽  
Important Process ◽  
Seamless Integration ◽  
Spintronic Devices ◽  
Organic Spintronics ◽  
Emerging Trends ◽  
Research Hotspots

Organic spintronics, extended the conventional spintronics with metals, oxides and semiconductors, has opened new routes to explore the important process of spin-injection, transport, manipulation and detection, holding significant promise of revolutionizing future spintronic applications in high density information storage, multi-functional devices, seamless integration, and quantum computing. Here we survey this fascinating field from some new viewpoints on research hotspots and emerging trends. The main achievements and challenges arising from spin injection and transport, in organic materials are highlighted, as well as prospects of novel organic spintronic devices are also emphasized.

scholarly journals Multi-Level Information Storage Using Engineered Electromechanical Resonances of Piezoelectric Wafers: A Concept Piezoelectric Quick Response (PQR) Code

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6344
Author(s):  
Christopher Hakoda ◽  
Eric S. Davis ◽  
Cristian Pantea ◽  
Vamshi Krishna Chillara
Keyword(s):  
Information Storage ◽  
Cumulative Number ◽  
Quick Response ◽  
Multiple Frequency ◽  
Potential Applications ◽  
Level Information ◽  
Multi Level ◽  
Storage Technologies ◽  
Piezoelectric Wafers ◽  
Polarization Profiles

A piezoelectric-based method for information storage is presented. It involves engineering the polarization profiles of multiple piezoelectric wafers to enhance/suppress specific electromechanical resonances. These enhanced/suppressed resonances can be used to represent multiple frequency-dependent bits, thus enabling multi-level information storage. This multi-level information storage is demonstrated by achieving three information states for a ternary encoding. Using the three information states, we present an approach to encode and decode information from a 2-by-3 array of piezoelectric wafers that we refer to as a concept Piezoelectric Quick Response (PQR) code. The scaling relation between the number of wafers used and the cumulative number of information states that can be achieved with the proposed methodology is briefly discussed. Potential applications of this methodology include tamper-evident devices, embedded product tags in manufacturing/inventory tracking, and additional layers of security with existing information storage technologies.

Two-Photon Three-Dimensional Optical Storage of a New Photobleaching Material

2012 ◽  
Vol 532-533 ◽  
pp. 8-11
Author(s):  
Jian Wen Cai
Keyword(s):  
Data Storage ◽  
Three Dimensional ◽  
Optical Storage ◽  
Optical Data Storage ◽  
High Density ◽  
Information Storage ◽  
Optical Data ◽  
Optical Information ◽  
Two Photon ◽  
Optical Information Storage

Two-photon three-dimensional optical data storage is an important method to realize high density storage and ultra-high density storage. This paper introduces the the basic principle of two-photon photobleaching optical storage, describes two-photon three-dimensional optical storage system and the absorption and fluorescence spectra of a new type of photobleaching materials BASF in detail, carries out the experimental study that two-photon information is written and read out against a new photobleaching material of BASF using femtosecond pulse laser wavelength is 800nm, and realize two layers of optical information storage, the information point spacing is 8μm and the interlayer distance is 15μm; two-layer information point signal strength is recognized using Recognition algorithm. The experiment proved that new photobleaching material of BASF can be used for two-photon three-dimensional optical storage, that has laid a solid foundation for the high-density and ultra-high density optical information storage materials research.

Advances in magnetic tapes for high density information storage

1995 ◽  
Vol 31 (6) ◽  
pp. 2883-2888 ◽  
Author(s):  
H.J. Richter ◽  
R.J. Veitch
Keyword(s):  
High Density ◽  
Information Storage

scholarly journals Transfer Modeling for 1T1R Crossbar Arrays with Line Resistances

2021 ◽  
Author(s):  
Xin Zhang ◽  
Ying Zeng
Keyword(s):  
Nonvolatile Memory ◽  
Matrix Algebra ◽  
Information Storage ◽  
Crossbar Array ◽  
Array Architecture ◽  
Quantitative Performance ◽  
The One ◽  
Storage Technologies ◽  
Array Performance ◽  
Algebra Method

Abstract Progress of neuromorphic computing and next-generation information storage technologies hinges on the development of emerging nonvolatile memory (eNVM) devices, which are typically organized employing the crossbar array architecture. To facilitate quantitative performance analysis of eNVM crossbar array architecture, this paper proposes a way to study the one-transistor-one-resistor (1T1R, R: eNVM devices) crossbar arrays based on matrix algebra method. The comparative analysis of 1T1R crossbar array modeling based on matrix algebra method and compact-model SPICE simulations verifies the accuracy of the proposed method, which can be directly used for static quantitative analysis and evaluation of 1T1R crossbar array performance. With the proposed method, the optimization of array operation schemes and current backflow issue are discussed. Our analysis indicates that the proposed method is capable of flexibly adjusting array parameters and consider the influence of line resistance on array operation, and can provide guidance for improving the sensing margin of the array through multi-parameter co-simulation. The proposed matrix algebra-based 1T1R crossbar array modeling method can bridge the gap between the accuracy and flexibility of the available methods.

scholarly journals THE DIRECT OBSERVATION OF MAGNETISATION REVERSAL IN FILMS OF INTEREST FOR HIGH DENSITY INFORMATION STORAGE

1998 ◽  
Vol 22 (S_2_MORIS_97) ◽  
pp. S2_15-20 ◽  
Author(s):  
J N Chapman ◽  
J Rose ◽  
I S Weir ◽  
I S Molchanov ◽  
D M Titterington
Keyword(s):  
Direct Observation ◽  
High Density ◽  
Information Storage

scholarly journals Optically controlled large-coercivity room-temperature thin-film magnets

2021 ◽  
Author(s):  
Anish Philip ◽  
Yifan Zhou ◽  
Girish Tewari ◽  
Sebastiaan Van Dijken ◽  
Maarit Karppinen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
High Density ◽  
Information Storage ◽  
New Horizons ◽  
Hard Magnets

Photo-controlled room-temperature hard magnets could open new horizons for high-density information storage. For this, the material should be fabricated as device-integrable (conformal, stretchable, transparent, etc.) thin films and preferably from...

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