Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

2013 ◽  
Author(s):  
Thomas Gubiotti ◽  
Jeff Fuge Sun ◽  
Regina Freed ◽  
Francoise Kidwingira ◽  
Jason Yang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Pattern Generator ◽  
Digital Pattern

scholarly journals Digital pattern generator: an electron-optical MEMS for massively parallel reflective electron beam lithography

2013 ◽  
Vol 12 (3) ◽  
pp. 031107 ◽  
Author(s):  
Luca Grella ◽  
Allen Carroll ◽  
Kirk Murray ◽  
Mark A. McCord ◽  
William M. Tong ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Pattern Generator ◽  
Massively Parallel ◽  
Optical Mems ◽  
Digital Pattern

scholarly journals A low cost high resolution pattern generator for electron-beam lithography

2003 ◽  
Vol 74 (7) ◽  
pp. 3579-3582 ◽  
Author(s):  
G. Pennelli ◽  
F. D’ Angelo ◽  
M. Piotto ◽  
G. Barillaro ◽  
B. Pellegrini
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Low Cost ◽  
Pattern Generator

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

Device Photolithography: The Electron Beam Pattern Generator

1970 ◽  
Vol 49 (9) ◽  
pp. 2077-2094 ◽  
Author(s):  
W. Samaroo ◽  
J. Raamot ◽  
P. Parry ◽  
G. Robertson
Keyword(s):  
Electron Beam ◽  
Pattern Generator ◽  
Beam Pattern
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