Reconstructing in laser wavelength scanning interference test of aspheric surface

2012 ◽  
Author(s):  
Lulu Li ◽  
Wenchuan Zhao ◽  
Xianyu Su ◽  
Fan Wu ◽  
Bin Fan
Keyword(s):  
Laser Wavelength ◽  
Aspheric Surface ◽  
Wavelength Scanning ◽  
Interference Test

Multimode CYTOP fiber interferometric response to laser wavelength scanning

2020 ◽  
Author(s):  
Ivan Chapalo ◽  
Alexander Petrov ◽  
Antreas Theodosiou ◽  
Kyriacos Kalli ◽  
Oleg Kotov
Keyword(s):  
Laser Wavelength ◽  
Wavelength Scanning

Imaging nanostructures on ablated kapton polymide

1993 ◽  
Vol 51 ◽  
pp. 872-873
Author(s):  
Daniel L. Callahan ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Polymer Surface ◽  
Grating Period ◽  
Laser Wavelength ◽  
Integrated Devices ◽  
Transmission Electron ◽  
Excimer Laser Irradiation ◽  
Produce Line ◽  
Line Patterns ◽  
Anisotropic Conduction

Excimer laser irradiation has been used to interferometrically ablate submicron line patterns on to Kapton polyimide. Such patterned material may exhibit highly anisotropic conduction as was predicted from previous studies showing enhanced conductivity from uniformly ablated material. We are currently exploiting this phenomenon to create integrated devices using conventional polymers as both dielectrics and conductors. Extensive scanning electron microscopy (SEM) and limited transmission electron microscopy (TEM) have been conducted in order to characterize the morphology of such patterned nanostructures as a function of processing conditions.The ablation technique employed produces an interference pattern on the polymer surface of period equal to half that of a diffraction grating period, independent of the laser wavelength. In these experiments, a 328 nm grating has been used to produce line patterns of 164 nm line-spacings as shown in Figures 1 and 2. A 200 Å Au coating has been used to both prevent charging and, perhaps more importantly, enhance contrast.

Analysis of Train Interference Test

ICTE 2013 ◽  
2013 ◽  
Author(s):  
Qian Zhang ◽  
Yan Xuan ◽  
Lan Wang ◽  
Xing Fang ◽  
Hongmei Li
Keyword(s):  
Interference Test

Linear and Nonlinear Optical Properties of Natural Dyes Freestanding Films and Application in Optical Limiting

2020 ◽  
pp. 139-143
Keyword(s):  
Absorption Coefficient ◽  
Water Solution ◽  
Optical Limiting ◽  
Refraction Index ◽  
Laser Wavelength ◽  
Solid State Laser ◽  
Natural Dyes ◽  
Linear And Nonlinear ◽  
532 Nm ◽  
Absorbance Spectra

Natural dyes were followed and prepared from a pomegranate, purple carrot, and eggplant peel. The absorbance spectra was measured in the wavelength range 300-800 nm. The linear properties measurements of the prepared natural dye freestanding films were determined include absorption coefficient (α0), extinction coefficient (κ), and linear refraction index (n). The nonlinear refractive index n2 and nonlinear absorption coefficient β2 of the natural dyes in the water solution were measured by the optical z-scan technique under a pumped solid state laser at a laser wavelength of 532 nm. The results indicated that the pomegranate dye can be promising candidates for optical limiting applications with significantly low optical limiting of 3.5 mW.

The New Interference Test: Reservoir Connectivity Information from Downhole Temperature Data

2007 ◽  
Author(s):  
David Anthony Hutchinson ◽  
Najiya Kuramshina ◽  
Ali Chingiz Oglu Sheydayev ◽  
Simon N.J. Day
Keyword(s):  
Temperature Data ◽  
Connectivity Information ◽  
Interference Test ◽  
Downhole Temperature ◽  
Reservoir Connectivity

The Influence of Optical Beams on Semiconductor Devices During Failure Analysis

2002 ◽  
Author(s):  
Charles Zhang ◽  
Matt Thayer ◽  
Lowell Herlinger ◽  
Greg Dabney ◽  
Manuel Gonzalez
Keyword(s):  
Failure Analysis ◽  
Semiconductor Devices ◽  
Laser Wavelength ◽  
Fault Isolation ◽  
Analysis Techniques ◽  
Cmos Transistor ◽  
Optical Beams

Abstract A number of backside analysis techniques rely on the successful use of optical beams in performing backside fault isolation. In this paper, the authors have investigated the influence of the 1340 nm and 1064 nm laser wavelength on advanced CMOS transistor performance.

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