Holding beam injection for improving self-induced polarization rotation in a semiconductor optical amplifier

2012 ◽  
Author(s):  
S. J. Zhang ◽  
Y. L. Zhang ◽  
S. Liu ◽  
Y. Liu
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Induced Polarization ◽  
Polarization Rotation ◽  
Beam Injection

All-optical 2R regeneration based on self-induced polarization rotation in a single semiconductor optical amplifier

2009 ◽  
Vol 54 (20) ◽  
pp. 3704-3708 ◽  
Author(s):  
PinXiang Duan ◽  
LiGong Chen ◽  
ShangJian Zhang ◽  
XiaoLi Zhou ◽  
YongZhi Liu ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Induced Polarization ◽  
Polarization Rotation ◽  
All Optical ◽  
2R Regeneration

Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ashif Raja ◽  
Kousik Mukherjee ◽  
Jitendra Nath Roy
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Contrast Ratio ◽  
Optical Amplifier ◽  
Majority Voting ◽  
Polarization Rotation ◽  
All Optical ◽  
Eye Opening ◽  
Amplified Spontaneous Emission Noise ◽  
Quality Factor Q

Abstract Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.

Sign in / Sign up

Export Citation Format

Share Document