Fabrication and characterization of nitride-based blue light-emitting diodes on moth-eye patterned sapphire substrate (MPSS)

2013 ◽  
Author(s):  
T. Tsuchiya ◽  
S. Umeda ◽  
Mihoko Sowa ◽  
T. Kondo ◽  
T. Kitano ◽  
...  
Keyword(s):  
Blue Light ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Fabrication And Characterization

Fabrication and characterization of GaN-based blue light-emitting diodes

1998 ◽  
Author(s):  
Yuxin Li ◽  
Michael G. Brown ◽  
Ivan Eliashevich ◽  
T. DiCarlo ◽  
Chuong A. Tran ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Fabrication And Characterization

Fabrication and Characterization of High-Quality Factor GaN-Based Resonant-Cavity Blue Light-Emitting Diodes

2012 ◽  
Vol 24 (17) ◽  
pp. 1472-1474 ◽  
Author(s):  
Xiao-Long Hu ◽  
Wen-Jie Liu ◽  
Guo-En Weng ◽  
Jiang-Yong Zhang ◽  
Xue-Qin Lv ◽  
...  
Keyword(s):  
Quality Factor ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
High Quality Factor ◽  
High Quality ◽  
Light Emitting ◽  
Fabrication And Characterization

Fabrication and Characterization of Blue Organic Light-emitting Diodes

2011 ◽  
Author(s):  
Merric Srour ◽  
Richard Fu ◽  
Steven Blomquist ◽  
Jianmin Shi ◽  
Eric Forsythe ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Fabrication And Characterization

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

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