True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

2013 ◽  
Author(s):  
Henryk Turski ◽  
Marcin Siekacz ◽  
Grzegorz Muzioł ◽  
Marta Sawicka ◽  
Szymon Grzanka ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Laser Diodes ◽  
True Blue ◽  
Low Dislocation Density ◽  
Nitride Laser

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

2012 ◽  
Vol 5 (11) ◽  
pp. 112103 ◽  
Author(s):  
Czeslaw Skierbiszewski ◽  
Marcin Siekacz ◽  
Henryk Turski ◽  
Grzegorz Muziol ◽  
Marta Sawicka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
True Blue ◽  
Nitride Laser

scholarly journals Low dislocation density, high power InGaN laser diodes

2004 ◽  
Vol 9 ◽  
Author(s):  
Piotr Perlin ◽  
M. Leszczyñski ◽  
P. Prystawko ◽  
P. Wisniewski ◽  
R. Czernetzki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
High Power ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Homogeneous Distribution ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Generation ◽  
Better Than

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 105 cm−2, i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 μm wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

2000 ◽  
Vol 39 (Part 2, No. 7A) ◽  
pp. L647-L650 ◽  
Author(s):  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Masayuki Senoh ◽  
Toshio Matsushita ◽  
Yasunobu Sugimoto ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Long Lifetime ◽  
Multi Quantum Well

400-nm Band AlGaInN-Based High Power Laser Diodes

2001 ◽  
Vol 693 ◽  
Author(s):  
Takeharu Asano ◽  
Motonobu Takeya ◽  
Tsuyoshi Tojyo ◽  
Shinro Ikeda ◽  
Takashi Mizuno ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Active Layer ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Direct Result ◽  
Electron Blocking Layer ◽  
Low Dislocation Density ◽  
Operating Current

AbstractHigh-power AlGaInN-based laser diodes (LDs) operating with high reliability in the 400-nm band have been successfully fabricated using a high-productivity process. Epitaxial lateral overgrowth (ELO) over a 10-m m region was employed to obtain a broad growth area with low dislocation density, and the thickness of the ELO-GaN layer was limited to approximately 5 m in order to minimize wafer bending. These techniques allow for the easy and reproducible alignment of the laser stripe on the region of low dislocation density. The insertion of a GaInN interlayer between the active layer and the AlGaN electron blocking layer was effective for reducing the strain between these two layers, resulting in homogeneous luminescence from the active layer and lower operating current. A mean time to failure of 15000 h under 30-mW continuous-wave operation at 60°C was realized as a direct result of the lower operating current. Productivity was remarkably improved by performing epitaxial growth on a 3-inch substrate. Highly uniform laser wafers were successfully fabricated by achieving minimal temperature variation (1000 ±7°C) over the 3-inch substrate. The resultant laser structures varied in thickness by only ±5%, and the photoluminescence wavelength was consistent within ±2.5 nm over the entire 3-inch substrate. The average threshold current of 550 LDs selected from a fourth wafer was 32.7 mA, with small standard deviation of 3.2 mA.

Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer

2010 ◽  
Vol 8 (2) ◽  
pp. 464-466 ◽  
Author(s):  
Kenichiro Takeda ◽  
Kengo Nagata ◽  
Tomoki Ichikawa ◽  
Kentaro Nonaka ◽  
Yuji Ogiso ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Low Dislocation Density ◽  
Internal Loss

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

2006 ◽  
Author(s):  
L. Marona ◽  
P. Wisniewski ◽  
P. Prystawko ◽  
S. Porowski ◽  
T. Suski ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Laser Diodes ◽  
Low Dislocation Density ◽  
Bulk Gan

350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

2015 ◽  
Author(s):  
Mary H. Crawford ◽  
Andrew A. Allerman ◽  
Andrew M. Armstrong ◽  
Jonathan J. Wierer ◽  
Weng W. Chow ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Laser Diodes ◽  
Band Edge ◽  
Low Dislocation Density

Low dislocation density AlN on sapphire prepared by double sputtering and annealing

2020 ◽  
Vol 13 (9) ◽  
pp. 095501
Author(s):  
Ding Wang ◽  
Kenjiro Uesugi ◽  
Shiyu Xiao ◽  
Kenji Norimatsu ◽  
Hideto Miyake
Keyword(s):  
Dislocation Density ◽  
Low Dislocation Density
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