Monte Carlo simulation on the effect of dermal thickness variances on noninvasive blood glucose sensing

2013 ◽  
Author(s):  
Jingying Jiang ◽  
Da Zou ◽  
Xiaolin Min ◽  
Zhenhe Ma ◽  
Kexin Xu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Blood Glucose ◽  
Glucose Sensing ◽  
Dermal Thickness

scholarly journals Monte Carlo simulation-based thinning and calculating method for noninvasive blood glucose sensing by near-infrared spectroscopy

2017 ◽  
Vol 10 (02) ◽  
pp. 1650041
Author(s):  
Congcong Ma ◽  
Jia Qin ◽  
Qi Zhang ◽  
Junsheng Lu ◽  
Kexin Xu ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Infrared Spectroscopy ◽  
Blood Glucose ◽  
Light Source ◽  
Near Infrared Spectroscopy ◽  
Measurement System ◽  
Near Infrared ◽  
Glucose Sensing ◽  
Positioning Error ◽  
Calculating Method

Previous results show that the floating reference theory (FRT) is an effective tool to reduce the influence of interference factors on noninvasive blood glucose sensing by near-infrared spectroscopy (NIRS). It is the key to measure the floating reference point (FRP) precisely for the application of FRT. Monte Carlo (MC) simulation has been introduced to quantitatively investigate the effects of positioning errors and light source drifts on measuring FRP. In this article, thinning and calculating method (TCM) is proposed to quantify the positioning error. Meanwhile, the normalization process (NP) is developed to significantly reduce the error induced by light source drift. The results according to TCM show that 7[Formula: see text][Formula: see text]m deviations in positioning can generate about 10.63% relative error in FRP. It is more noticeable that 1% fluctuation in light source intensity may lead to 12.21% relative errors. Gratifyingly, the proposed NP model can effectively reduce the error caused by light source drift. Therefore, the measurement system for FRPs must meet that the positioning error is less than 7[Formula: see text][Formula: see text]m, and the light source drift is kept within 1%. Furthermore, an improvement for measurement system is proposed in order to take advantage of the NP model.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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