Low loss optical modulator based on slot-loaded waveguide for unmodified CMOS process

2012 ◽  
Author(s):  
Wei Tan ◽  
Qifeng Long ◽  
Zhijuan Tu ◽  
Xingjun Wang ◽  
Huaxiang Yi ◽  
...  
Keyword(s):  
Optical Modulator ◽  
Cmos Process ◽  
Low Loss

Fabrication of a micromachined optical modulator using the CMOS process

2000 ◽  
Author(s):  
Hunglin Chen ◽  
Kaihsiang Yen ◽  
Huiwen Huang ◽  
Jinhung Chio ◽  
Chingliang Dai ◽  
...  
Keyword(s):  
Optical Modulator ◽  
Cmos Process

Low-loss silicon optical modulator using doping compensation method at 2 μm wavelength band

2021 ◽  
Author(s):  
Heming Hu ◽  
Xindan Zhang ◽  
Miaomiao Gu ◽  
Yufei Liu ◽  
Lianxi Jia ◽  
...  
Keyword(s):  
Compensation Method ◽  
Optical Modulator ◽  
Wavelength Band ◽  
Low Loss

A Low-Loss and High-Isolation Transformer-Based mm-Wave SPDT with Integrated Fan-out Wafer Level Packaging

2019 ◽  
Vol 29 (07) ◽  
pp. 2050115
Author(s):  
Xing Quan ◽  
Jiang Luo ◽  
Guodong Su ◽  
Kai Jing ◽  
Jinsong Zhan
Keyword(s):  
Design Method ◽  
Control Device ◽  
Secondary Coil ◽  
Cmos Process ◽  
Wafer Level ◽  
Low Loss ◽  
High Isolation ◽  
Wafer Level Packaging ◽  
Isolation Transformer ◽  
Better Than

This paper proposes a low-loss and high-isolation transformer (TF)-based mm-wave single-pole double-throw (SPDT) switch. The center-tapped technique is employed at the secondary coil of TF to improve isolation performance. The TF is implemented with the metals in redistribution layers (RDLs) in integrated fan-out (InFO) wafer level packaging technology to obtain low insertion loss (IL) and small chip size as the TF usually dominates the area of SPDT. The control device of the SPDT is realized in 40[Formula: see text]nm bulk CMOS process. The simulated result shows the proposed SPDT achieves a minimum IL of 1.34[Formula: see text]dB and the IL is less than 2.2[Formula: see text]dB at 24–31[Formula: see text]GHz. The isolations are better than 27[Formula: see text]dB between two double-throw ports and better than 20[Formula: see text]dB between single-pole and double-throw ports, respectively. The proposed SPDT has a compact silicon size of 220[Formula: see text][Formula: see text] (with PADs) and its return losses are better than [Formula: see text]9[Formula: see text]dB at 24–31[Formula: see text]GHz and. This work explores a new chip-package co-design method for the SPDT and may have some guidance for the co-design of SPDT and antenna in package (AiP).

High-Speed Low-Loss Schottky-i-n InP-Based Optical Modulator for RF Photonics

2007 ◽  
Vol 19 (5) ◽  
pp. 270-272 ◽  
Author(s):  
Jie Lin ◽  
Andreas Leven ◽  
N. G. Weimann ◽  
Y. Yang ◽  
R. F. Kopf ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Modulator ◽  
Low Loss ◽  
Rf Photonics

scholarly journals Fabrication of low loss and high speed silicon optical modulator using doping compensation method

2011 ◽  
Vol 19 (19) ◽  
pp. 18029 ◽  
Author(s):  
Xiaoguang Tu ◽  
Tsung-Yang Liow ◽  
Junfeng Song ◽  
Mingbin Yu, ◽  
Guo Qiang Lo
Keyword(s):  
High Speed ◽  
Compensation Method ◽  
Optical Modulator ◽  
Low Loss

Fabrication of a micromachined optical modulator using the CMOS process

2001 ◽  
Vol 11 (5) ◽  
pp. 612-615 ◽  
Author(s):  
Ching-Liang Dai ◽  
Hung-Lin Chen ◽  
Pei-Zen Chang
Keyword(s):  
Optical Modulator ◽  
Cmos Process

Low-Loss Polycrystalline Silicon Waveguides for High-Efficiency Optical Modulator

2012 ◽  
Author(s):  
T. Horikawa ◽  
M. Takahashi ◽  
J. Fujikata ◽  
S. Takahashi ◽  
T. Akagawa ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Optical Modulator ◽  
Low Loss ◽  
Silicon Waveguides
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