High rate premetallization sputter etching of submicron vias using a high-density dual-frequency plasma source

1994 ◽  
Author(s):  
Eldon Chen ◽  
Sunnys Hsieh ◽  
Ting-Huang Lin ◽  
Murali K. Narasimhan ◽  
Mark Mueller ◽  
...  
Keyword(s):  
Plasma Source ◽  
High Density ◽  
High Rate ◽  
Dual Frequency ◽  
Frequency Plasma ◽  
Sputter Etching

Production of High-Density Radio-Frequency Plasma Source by Ring-Shaped Hollow-Cathode Discharge at Various Trench Shapes

2013 ◽  
Vol 41 (8) ◽  
pp. 1856-1862 ◽  
Author(s):  
Yasunori Ohtsu ◽  
Yoshiki Yahata ◽  
Johji Kagami ◽  
Yasushi Kawashimo ◽  
Tatsuya Takeuchi
Keyword(s):  
Radio Frequency ◽  
Hollow Cathode ◽  
Plasma Source ◽  
High Density ◽  
Hollow Cathode Discharge ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

Fast Deposition of Highly Crystallized Microcrystalline Si Films Utilizing a High-Density Microwave Plasma Source for Si Thin Film Solar Cells

2006 ◽  
Vol 910 ◽  
Author(s):  
Haijun Jia ◽  
Hajime Shirai ◽  
Michio Kondo
Keyword(s):  
Deposition Rate ◽  
Microwave Plasma ◽  
Defect Density ◽  
Mass Density ◽  
Plasma Source ◽  
High Density ◽  
High Rate ◽  
Substrate Bias ◽  
Si Films ◽  
Gas Supply

AbstractIn this work, we investigate the influences of source gas supply method and dc substrate bias on the deposition rate as well as structural properties of μc-Si films and demonstrate the high rate synthesis of highly crystallized μc-Si films with improved film density by using a high-density and low-temperature microwave plasma source. A high flux of SiH3 and atomic hydrogen on film growing surface achieved through adjusting SiH4 gas supply configuration is effective for the fast deposition of highly crystallized μc-Si films and for the improvement of film mass density. Appropriate ion bombardment under moderate negative dc substrate bias along with the suppression of contributions of detrimental species to film growth also account for the improvement in properties of resulting films. As a consequence, a very fast deposition rate of ~65 Å/s was achieved with a high Raman crystallinity Ic/Ia>3 and a low defect density of (1-2)×1016 cm-3 despite a high silane concentration of 67%.

Nitrogen doping of molecular beam epitaxially grown CdTe with a radio-frequency plasma source

1994 ◽  
Vol 138 (1-4) ◽  
pp. 443-447 ◽  
Author(s):  
K.A. Dhese ◽  
D.E. Ashenford ◽  
J.E. Nicholls ◽  
P. Devine ◽  
B. Lunn ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Plasma Source ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

Noncontingent Nonreinforcement of a Response as the Aversive Event in a Cer Paradigm

1971 ◽  
Vol 29 (3_suppl) ◽  
pp. 1196-1198 ◽  
Author(s):  
Richard S. Calef ◽  
Richard A. Kaufman ◽  
Ronald N. Bone ◽  
Steven A. Werk
Keyword(s):  
Reinforcement Schedule ◽  
Present Experiment ◽  
High Density ◽  
High Rate ◽  
Aversive Event ◽  
Necessary Condition ◽  
Facilitation Effect ◽  
Response Facilitation ◽  
Early Training ◽  
Low Rate

The present experiment investigated the effects of noncontingent nonreinforcement as the aversive event in a CER paradigm. The results showed a significant response-facilitation effect during early training, but none during later training with a high rate-producing, high-density reinforcement schedule. The present results imply that a low rate-producing, high-density reinforcement schedule is not a necessary condition for response facilitation.

High-Density Helicon Plasma Source for Linear Plasma Generators

2021 ◽  
Vol 47 (6) ◽  
pp. 526-535
Author(s):  
E. I. Kuzmin ◽  
I. V. Shikhovtsev
Keyword(s):  
Plasma Source ◽  
High Density ◽  
Helicon Plasma ◽  
Linear Plasma ◽  
Plasma Generators
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