ArF excimer laser beam delivery systems for medical applications

1994 ◽  
Author(s):  
Uichi Kubo ◽  
Yuichi Hashishin ◽  
Hitoshi Nakano ◽  
Takeyoshi Nakayama ◽  
Hiroyuki Tanaka
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Delivery Systems ◽  
Medical Applications ◽  
Arf Excimer Laser ◽  
Beam Delivery

Excimer laser beam delivery systems for medical applications

1993 ◽  
Author(s):  
Uichi Kubo ◽  
Yuichi Hashishin ◽  
Kazuyuki Okada ◽  
Hiroyuki Tanaka
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Delivery Systems ◽  
Medical Applications ◽  
Beam Delivery

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

High Selective Etching of SiO2/Si by ArF Excimer Laser

1993 ◽  
Vol 334 ◽  
Author(s):  
K. Kitamura ◽  
M. Murahara
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Wavelength Region ◽  
Chemical Behavior ◽  
Mixed Gas ◽  
Reaction Cell ◽  
Si Substrates ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Uv Absorption Spectrum

AbstractDry etching of SiO2 insulation layer has been required in the Si semiconductor manufacturing process. The etching of SiO2/Si is chemically carried out by using HF solution. We successfully demonstrated a new method for exclusive etching of SiO2 using the nitrosyle fluoride (NFO) gas which was produced from the mixed gas of NF3 and O2 with an ArF excimer laser irradiation.SiO2 and Si substrates were placed side by side in a reaction cell which was filled with 3% O2 gas in NF3 at the gas pressure of 380 Torr. ArF excimer laser beam was irradiated parallel to the substrates. The laser fluence was kept at lOOmJ/cm2. As soon as the mixed gas of NF3 and O2 was irradiated with the ArF laser beam, an intermediate product of NFO was produced. The chemical behavior of NFO was confirmed from the UV absorption spectrum with absorption in the 310 to 330nm wavelength region. In the presence of SiO2, the absorption of NFO diminished. The absorption of NO2, instead of NFO, appeared at 350nm. This indicates that the oxygen atoms of SiO2 were pulled out by NFO.The etching reactions continued for 3 minutes after irradiation when the SiO2 and Si substrates were kept in an atmosphere of the reactant gases. As a result, not the Si but SiO2 substrate was etched with the depth of 2000Å.

UV laser beam delivery systems for medical excimer lasers

1992 ◽  
Author(s):  
Uichi Kubo ◽  
Kazuyuki Okada ◽  
Yuichi Hashishin ◽  
Hiroyuki Tanaka
Keyword(s):  
Laser Beam ◽  
Delivery Systems ◽  
Excimer Lasers ◽  
Uv Laser ◽  
Beam Delivery

Novel excimer laser beam delivery technique using binary masks

1991 ◽  
Author(s):  
Yung-Sheng Liu ◽  
Rosalie M. Levinson ◽  
J. W. Rose
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Delivery Technique ◽  
Beam Delivery
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