Detector and imager of IR radiation using IR quenching of visible radiation in crystals at room temperature

1994 ◽  
Author(s):  
Gennadii K. Vlasov ◽  
Grigorii M. Chernyavskiy ◽  
Nikolaii A. Dolgikh ◽  
Dmitrii N. Vylegzhanin
2018 ◽  
Vol 19 (12) ◽  
pp. 795-801
Author(s):  
Tadeusz Niedziela

In range of 10.6 μm IR radiation an analysis of noncooled (T = 300 K) (PC) photodiodes and (EMCD) magnetoexlusion detectors with (Hg,Cd)Te was made. The basic detection parameters of these devices are limited by the noise resulting from statistical processes of thermal generation and carrier recombination. The parameter evaluation of related photodiodes demonstrates that the optimal parameters such as: thickness or structure doping on the substrate with a widened energy gap differs each other for structures with ohmic contacts at both ends. In the paper, for photodiodes and magnetoexclusion detectors with (Hg,Cd)Te the research results : optimal photosensitive detection parameters are presented for the room temperature (T=300 K) and acceptable large as well as small (5 and 0.5 W / mm2) densities of the dissipated power.


Author(s):  
Н.Н. Новикова ◽  
В.А. Яковлев ◽  
И.В. Кучеренко ◽  
В.С. Виноградов ◽  
Ю.А. Алещенко ◽  
...  

AbstractThe reflectance spectra of the topological insulator Pb_1– x Sn_ x Se ( x = 0.2, 0.34) films grown by molecular-beam epitaxy on a ZnTe/GaAs substrate are measured in the range of 12–2500 cm^–1 at room temperature. Using dispersion analysis, the frequencies of transverse optical phonons, plasma frequencies, highfrequency permittivities, and layer thicknesses are determined. In the quasi-steady-state approximation, the interface mode frequencies of the four-layer structure are calculated as a function of the overlap parameter χ_1 (0 ≤ χ_1 ≤ 1). The parameter describes the degree of overlap of two interface modes localized at planes bounding the layer to the right and left. The existence of interacting interface modes in the structure makes its spectrum different from the sum of component spectra. These differences manifest themselves in the experiment. The conditions of the interaction of interface modes with IR radiation are discussed.


2008 ◽  
Vol 38 (2) ◽  
pp. 95-96 ◽  
Author(s):  
N N Il'ichev ◽  
V P Danilov ◽  
V P Kalinushkin ◽  
M I Studenikin ◽  
P V Shapkin ◽  
...  

Author(s):  
V. M. Pilipovich ◽  
V. B. Zalesski ◽  
A. I. Kanojka ◽  
V. M. Kravchenko ◽  
K. A. Reshikov

The method of transformation of information from one spectral range to another based on Fabry – Perot microresonators is offered. The method uses incident radiation of an object as affecting a microresonator material (a microresonator material must absorb this radiation), and visible radiation of the optical part of the spectrum as sensing, or reading radiation (a microresonator material should not absorb this radiation). The absorbed energy of incident radiation leads to a change in a microcavity temperature, which results in a change in the optical base of the resonator. The high sensitivity of the Fabry – Perot microcavities is a consequence of the fact that the principle of their operation is based on the physical phenomenon of multipath interference. A common shortcoming of the Fabry – Perot standards is their sensitivity to operating conditions, for example, to a change in the ambient temperature, which also leads to a change in the optical base of the resonator, as well as the influence of IR radiation. This leads to a shift in the spectral characteristics of transmittance or reflection of the Fabry – Perot standards, which worsens their performance characteristics. The method allows one to minimize the environmental temperature fluctuation influence on characteristics of the Fabry – Perot microresonator, which is an element that transforms the information from one spectral range to another. Minimization is performed when the starting temperature point of the microresonator corresponds to a maximum change in the probing radiation intensity due to the temperature.


2003 ◽  
Vol 29 (11) ◽  
pp. 904-906 ◽  
Author(s):  
Yu. P. Sukhorukov ◽  
N. N. Loshkareva ◽  
A. V. Telegin ◽  
E. V. Mostovshchikova ◽  
V. L. Kuznetsov ◽  
...  

1997 ◽  
Vol 50 (3) ◽  
pp. 173 ◽  
Author(s):  
Xiao-Qiao Lu ◽  
W. David Johnson ◽  
Russell F. Howe ◽  
Yun-Yun Chen

Ultraviolet-visible and e.s.r. spectroscopies have been used to investigate the reactions of humic substances, extracted from swamp waters, with manganese(VII) and with chromium(VI). Potassium permanganate reacts quickly with humic substances to form manganese(II) derivatives. Phenolic groups are probably involved as a similar reaction occurs with simple phenols such as phenol and catechol. Manganese(II) interacts directly with carboxylate anionic groups in humic substances. E.s.r. spectroscopy shows that manganese(II) forms outer-sphere complexes with humic substances. E.s.r. spectra show that chromium(VI) is reduced to chromium(V) and then to chromium(III) in the presence of humic substances. The rate reduction of chromium(VI) depends on the concentration of humic substances and on pH, temperature, and u.v.-visible radiation. At pH 3 the rate of formation of chromium(V) is about 100 times faster than the rate of its reduction. At neutral pH and at room temperature the chromium(V) species is stable for a long period.


Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 861 ◽  
Author(s):  
Ivan Tretyakov ◽  
Sergey Svyatodukh ◽  
Aleksey Perepelitsa ◽  
Sergey Ryabchun ◽  
Natalya Kaurova ◽  
...  

In the 20th century, microelectronics was revolutionized by silicon—its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 × 10−10 W/√Hz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.


Author(s):  
J. E. Doherty ◽  
A. F. Giamei ◽  
B. H. Kear ◽  
C. W. Steinke

Recently we have been investigating a class of nickel-base superalloys which possess substantial room temperature ductility. This improvement in ductility is directly related to improvements in grain boundary strength due to increased boundary cohesion through control of detrimental impurities and improved boundary shear strength by controlled grain boundary micros true tures.For these investigations an experimental nickel-base superalloy was doped with different levels of sulphur impurity. The micros tructure after a heat treatment of 1360°C for 2 hr, 1200°C for 16 hr consists of coherent precipitates of γ’ Ni3(Al,X) in a nickel solid solution matrix.


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