Self-aligned molecular beam epitaxy of CdZnTe for IR focal plane arrays

1994 ◽  
Author(s):  
Nibir K. Dhar ◽  
Phillip R. Boyd ◽  
Paul M. Amirtharaj ◽  
John H. Dinan ◽  
J. D. Benson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Focal Plane ◽  
Molecular Beam ◽  
Focal Plane Arrays

Molecular beam epitaxy of HgCdTe for infrared focal plane arrays

1994 ◽  
Author(s):  
Alain Million ◽  
P. Ferret ◽  
Jean-Paul Chamonal ◽  
Gerard L. Destefanis ◽  
Pierre Nicolas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Focal Plane ◽  
Molecular Beam ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays

A focal plane array detector based on a variband isotype P-p junction in MCT layers grown by molecular beam epitaxy

2007 ◽  
Vol 43 (4) ◽  
pp. 308-313 ◽  
Author(s):  
V. V. Vasilyev ◽  
S. A. Dvoretsky ◽  
V. S. Varavin ◽  
N. N. Mikhailov ◽  
V. G. Remesnik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Focal Plane ◽  
Molecular Beam ◽  
Focal Plane Array ◽  
Array Detector

InSb focal plane array (FPAs) grown by molecular beam epitaxy (MBE)

2000 ◽  
Author(s):  
Tim Ashley ◽  
Ian M. Baker ◽  
Theresa M. Burke ◽  
David T. Dutton ◽  
John A. Haigh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Focal Plane ◽  
Molecular Beam ◽  
Focal Plane Array

Development of Molecular Beam Epitaxially Grown Hg1−x Cd x Te for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays

2007 ◽  
Vol 36 (8) ◽  
pp. 900-904 ◽  
Author(s):  
F. Aqariden ◽  
P.D. Dreiske ◽  
M.A. Kinch ◽  
P.K. Liao ◽  
T. Murphy ◽  
...  
Keyword(s):  
Focal Plane ◽  
Molecular Beam ◽  
High Density ◽  
Focal Plane Arrays

High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
R. D. Rajavel ◽  
D. M. Jamba ◽  
J. E. Jensen ◽  
O. K. Wu ◽  
C. A. Cockrum ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Simultaneous Detection ◽  
Focal Plane Arrays ◽  
Long Wave ◽  
Sharp Turn ◽  
Midwave Infrared ◽  
Long Wave Infrared

ABSTRACTMolecular beam epitaxy (MBE) offers benefits such as the capability for growth of compositionally-tailored heterostructures and in-situ doping of HgCdTe alloys. These capabilities were applied to the growth of long wave infrared unispectral focal plane arrays (FPA) with 480×4 elements. The detectivity (D*) map of the FPA demonstrated performance that was higher than the specification value, with no defective channels. Two-color detectors with the n-p-n architecture, for the simultaneous detection of two closely spaced bands in the midwave infrared spectrum were also grown by MBE. These devices exhibited sharp turn-off and turn-on in both bands. The quantum efficiency was greater than 70% and average R°A values exceeded 1×106 Ω-cm2 in both bands. These result demonstrate that high performance HgCdTe devices can be grown by MBE.

Molecular beam epitaxy (MBE) HgCdTe infrared focal plane array (IRFPA) flexible manufacturing

1994 ◽  
Author(s):  
Jose M. Arias ◽  
Majid Zandian ◽  
John G. Pasko ◽  
Jagmohan Bajaj ◽  
Lester J. Kozlowski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Flexible Manufacturing ◽  
Focal Plane ◽  
Molecular Beam ◽  
Focal Plane Array ◽  
Infrared Focal Plane Array

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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