High-resolution AC thin-film electroluminescence using active matrix on Si substrate

1994 ◽  
Author(s):  
Ron Khormaei ◽  
Stephen C. Thayer ◽  
Ken Ping ◽  
Christopher N. King ◽  
Gary M. Dolny ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Si Substrate ◽  
Active Matrix

Thin film cadmium selenide technology in large area active matrix high resolution displays

1992 ◽  
Vol 19 (1-4) ◽  
pp. 187-190 ◽  
Author(s):  
J. Farrell ◽  
M. Westcott ◽  
A. Van Calster ◽  
J. De Baets ◽  
I. De Rycke ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Cadmium Selenide ◽  
Large Area ◽  
Active Matrix

49.3: High-Resolution Active-Matrix Imager using Poly-Si Thin-Film Phototransistors in a Magnifying Viewer

2014 ◽  
Vol 45 (1) ◽  
pp. 709-712 ◽  
Author(s):  
Mutsumi Kimura ◽  
Masahito Okumura ◽  
Tokiyoshi Matsuda ◽  
Shinichiro Noguchi
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Active Matrix ◽  
Si Thin Film

scholarly journals New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1004
Author(s):  
Ching-Lin Fan ◽  
Hou-Yen Tsao ◽  
Chun-Yuan Chen ◽  
Pei-Chieh Chou ◽  
Wei-Yu Lin
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
High Mobility ◽  
Active Matrix ◽  
Driving Current ◽  
Zinc Tin Oxide ◽  
Pixel Circuit

In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔVTH_TFT), OLED degradation (ΔVTH_OLED), and the I-R drop of a power line (ΔVDD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm2V−1S−1 as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔVTH_TFT = ±1 V, ΔVDD = 0.5 V, and ΔVTH_OLED = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays.

56.5L:Late-News Paper: All-Printed Oxide Thin Film Transistor Arrays for High Resolution Active Matrix

2013 ◽  
Vol 44 (1) ◽  
pp. 786-789
Author(s):  
Shinji Matsumoto ◽  
Yuki Nakamura ◽  
Sadanori Arae ◽  
Yuji Sone ◽  
Yukiko Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Active Matrix

The measurement of thin-film reaction layers with high-resolution FESEM

1995 ◽  
Vol 53 ◽  
pp. 330-331
Author(s):  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Reaction Layer ◽  
Product Layer ◽  
Buffer Layers ◽  
Oxide Superconductors ◽  
Rate Limiting Step ◽  
Ceramic Thin Film ◽  
Backscattered Electron ◽  
Boundary Reaction

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

High-resolution scanning electron microscopy of thin-film magnetic media of magnetic recording disk

1992 ◽  
Vol 50 (2) ◽  
pp. 1334-1335
Author(s):  
K. Ogura ◽  
H. Nishioka ◽  
N. Ikeo ◽  
T. Kanazawa ◽  
J. Teshima
Keyword(s):  
Thin Film ◽  
Fine Structure ◽  
High Resolution ◽  
Magnetic Recording ◽  
High Performance ◽  
Magnetic Hysteresis ◽  
Grain Structure ◽  
Magnetic Media ◽  
Cross Sectional ◽  
Resolution Observation

Structural appraisal of thin film magnetic media is very important because their magnetic characters such as magnetic hysteresis and recording behaviors are drastically altered by the grain structure of the film. However, in general, the surface of thin film magnetic media of magnetic recording disk which is process completed is protected by several-nm thick sputtered carbon. Therefore, high-resolution observation of a cross-sectional plane of a disk is strongly required to see the fine structure of the thin film magnetic media. Additionally, observation of the top protection film is also very important in this field.Recently, several different process-completed magnetic disks were examined with a UHR-SEM, the JEOL JSM 890, which consisted of a field emission gun and a high-performance immerse lens. The disks were cut into approximately 10-mm squares, the bottom of these pieces were carved into more than half of the total thickness of the disks, and they were bent. There were many cracks on the bent disks. When these disks were observed with the UHR-SEM, it was very difficult to observe the fine structure of thin film magnetic media which appeared on the cracks, because of a very heavy contamination on the observing area.

A New Scanning Thermal Microprobe

1997 ◽  
Vol 503 ◽  
Author(s):  
Yongxia Zhang ◽  
Yanwei Zhang ◽  
Juliana Blaser ◽  
T. S. Sriiram ◽  
R. B. Marcus
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thermal Response ◽  
Temperature Sensing ◽  
Thermal Sensor ◽  
Atomic Force ◽  
Thin Film Thermocouple ◽  
Processing Steps ◽  
Thermocouple Junction

ABSTRACTA thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an Atomic Force Microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. The thermal response over the range 25–s 4.5–rovolts per degree C and is linear.

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