Effects of charge accumulation and biasing on resonant tunneling energies and tunneling dynamics

1994 ◽  
Author(s):  
David A. Cardimona ◽  
Paul M. Alsing ◽  
Anjali Singh ◽  
Vassilios Kovanis
Keyword(s):  
Resonant Tunneling ◽  
Charge Accumulation ◽  
Tunneling Dynamics

Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented MQW and superlattices

1996 ◽  
Vol 40 (1-8) ◽  
pp. 591-595 ◽  
Author(s):  
J.L Sánchez-Rojas ◽  
A Sacedón ◽  
A Sanz-Hervás ◽  
E Calleja ◽  
E Muñoz ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Charge Accumulation ◽  
Capacitance Measurements

scholarly journals Direct observation of resonant tunneling dynamics in high magnetic fields

1994 ◽  
Vol 72 (10) ◽  
pp. 1522-1525 ◽  
Author(s):  
A. P. Heberle ◽  
M. Oestreich ◽  
S. Haacke ◽  
W. W. Rühle ◽  
J. C. Maan ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Direct Observation ◽  
Resonant Tunneling ◽  
High Magnetic Fields ◽  
Tunneling Dynamics

Optical investigation of charge accumulation and bistability in an asymmetric double barrier resonant tunneling heterostructure

1990 ◽  
Vol 228 (1-3) ◽  
pp. 373-377 ◽  
Author(s):  
D.G. Hayes ◽  
M.S. Skolnick ◽  
P.E. Simmonds ◽  
L. Eaves ◽  
D.P. Halliday ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Optical Investigation ◽  
Charge Accumulation ◽  
Double Barrier ◽  
Double Barrier Resonant Tunneling

scholarly journals Проявления процессов резонансного туннелирования и случайных флуктуаций потенциала с участием уровней квантовых точек в релаксации фототока p-i-n GaAs/AlAs-гетероструктур

2021 ◽  
Vol 55 (10) ◽  
pp. 950
Author(s):  
Ю.Н. Ханин ◽  
Е.Е. Вдовин
Keyword(s):  
Quantum Dots ◽  
Resonant Tunneling ◽  
Charge Accumulation ◽  
Time Intervals ◽  
Long Wavelength ◽  
Barrier Layers ◽  
Local Fluctuations ◽  
Relaxation Curves ◽  
Random Fluctuations ◽  
Wavelength Light

As a result of studying the relaxation of the photocurrent in p-i-n GaAs / AlAs heterostructures, we discovered/ registered sharp features caused by resonant tunneling through the electronic levels of quantum dots in the barrier layers. It was shown that the time intervals of the manifestation of these resonances on the relaxation curves are determined by the dynamics of charge accumulation at the hole levels of quantum dots and by recombination with their participation.Strong random fluctuations of the photocurrent in the postresonant region, caused by local fluctuations of the residual charge at the hole levels of quantum dots, were also found.The study of relaxation in the medium and long wavelength light ranges confirms our interpretation of the observed effects.

Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra

1998 ◽  
Vol 32 (11) ◽  
pp. 1214-1221
Author(s):  
G. F. Karavaev ◽  
A. A. Voronkov
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Dynamics
Sign in / Sign up

Export Citation Format

Share Document