Fiber optic low-coherence Michelson interferometer for silicon growth measurement

1994 ◽  
Author(s):  
Robert R. Michael, Jr. ◽  
Christopher M. Lawson
Keyword(s):  
Fiber Optic ◽  
Michelson Interferometer ◽  
Growth Measurement ◽  
Low Coherence ◽  
Silicon Growth

Assembly-Free-Based Fiber-Optic Micro-Michelson Interferometer for High Temperature Sensing

2016 ◽  
Vol 28 (6) ◽  
pp. 625-628 ◽  
Author(s):  
Jinde Yin ◽  
Tiegen Liu ◽  
Junfeng Jiang ◽  
Kun Liu ◽  
Shuang Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Fiber Optic ◽  
Michelson Interferometer ◽  
Temperature Sensing

Fiber-optic Michelson interferometer based on α-Fe2O3/ZrO2 sensing membrane and its application in trace fluoride-ion detection

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Zizheng Yue ◽  
Wenlin Feng
Keyword(s):  
Silver Film ◽  
Fiber Optic ◽  
Michelson Interferometer ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Ion Concentration ◽  
Fluoride Ion ◽  
Ion Detection ◽  
Core Fiber ◽  
Sensing Membrane

Abstract In this work, a fiber-optic fluoride-ion-detection Michelson interferometer based on the thin-core fiber (TCF) and no-core fiber (NCF) coated with α-Fe2O3/ZrO2 sensing film is proposed and presented. The single-mode fiber (SMF) is spliced with the TCF and NCF in turn, and a waist-enlarged taper is spliced between them. Then, a silver film is plated on the end face of NCF to enhance the reflection. After the absorption of fluoride ion by the sensing film, the effective refractive index (RI) of the coated cladding will change, which leads to the regular red shift of the interference dip with the increasing fluoride-ion concentration. Thus, the fluoride-ion concentrations can be determined according to the corresponding dip wavelength shifts. The results show that the sensor has an excellent linear response (R 2 = 0.995) with good sensitivity (8.970 nm/ppm) when the fluoride-ion concentration is in the range of 0–1.5 ppm. The response time is about 15 s. The sensor has the advantage of good selectivity, good temperature and pH stabilities, and can be applied to detect fluoride ion effectively.

Low Coherence Interferometry for Non-Invasive Semiconductor Monitoring

1993 ◽  
Vol 324 ◽  
Author(s):  
Chris M. Lawson ◽  
Robert R. Michael
Keyword(s):  
Solar Cell ◽  
Manufacturing Processes ◽  
Growth Monitoring ◽  
Low Coherence ◽  
Non Invasive ◽  
Low Coherence Interferometry ◽  
Silicon Growth ◽  
Silicon Thickness ◽  
Efficient Solar Cell ◽  
Optical Low Coherence Reflectometry

AbstractWe report on the first use of optical low coherence reflectometry (OLCR) for Edge Defined Film-Fed Growth (EFG) silicon characterization. This OLCR sensor system has been used to measure horizontal profiles of silicon thickness and flatness to an accuracy of 1.5 Rim with the sensor head positioned 1 cm away from the silicon. The use of this noninvasive sensor for EFG silicon growth monitoring may lead to more efficient solar cell manufacturing processes.

scholarly journals Digital phase demodulation for low-coherence interferometry-based fiber-optic sensors

2018 ◽  
Vol 411 ◽  
pp. 27-32 ◽  
Author(s):  
Y. Liu ◽  
R. Strum ◽  
D. Stiles ◽  
C. Long ◽  
A. Rakhman ◽  
...  
Keyword(s):  
Fiber Optic ◽  
Fiber Optic Sensors ◽  
Low Coherence ◽  
Digital Phase ◽  
Low Coherence Interferometry ◽  
Phase Demodulation
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