Fiber optics based in-situ FTIR monitoring of organometallic chemical vapor deposition of compound semiconductors

1993 ◽  
Author(s):  
Sateria Salim ◽  
C. K. Lim ◽  
Klavs F. Jensen ◽  
Richard D. Driver
Keyword(s):  
Chemical Vapor Deposition ◽  
Fiber Optics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Compound Semiconductors ◽  
In Situ Ftir ◽  
Organometallic Chemical Vapor Deposition

Organometallic chemical vapor deposition of III/V compound semiconductors with novel organometallic precursors

1988 ◽  
Vol 110 (18) ◽  
pp. 6248-6249 ◽  
Author(s):  
Alan H. Cowley ◽  
Brian L. Benac ◽  
John G. Ekerdt ◽  
Richard A. Jones ◽  
Kenneth B. Kidd ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Compound Semiconductors ◽  
Organometallic Precursors ◽  
Organometallic Chemical Vapor Deposition

Digital Chemical Vapor Deposition of Silicon Oxide/Nitride and its Surface Reaction Study

1992 ◽  
Vol 284 ◽  
Author(s):  
H. Sakaue ◽  
T. Nakasako ◽  
K. Nakaune ◽  
T. Kusuki ◽  
A. Miki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reaction ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
In Situ Ftir ◽  
Deep Trench ◽  
Organic Species ◽  
Ftir Studies

ABSTRACTIn order to fill high quality insulators into narrower spaces in advanced metallizationthe digital CVD (Chemical Vapor Deposition) of multilayer stacked Si oxide and nitride films was studied. Reaction of TES (triethylsilane) with hydrogen (H) atoms was also found to lead to conformal CVD of Si film involving organic species. This reaction took place only on the surface reaction. In-situ FTIR studies reveal that H atoms react with Si-C2H5 bonds in TES and thus generate strong Si-CH3 bonds and weak Si-H bonds, thereby liberating H2 and forming the organic Si film on the surface, and the surface reaction is dominated by the thermal effect from the substrate. Then Si oxide or nitride films were formed by the digitaCVD which repeated a cycle of deposition of this film with subsequent oxidation or nitridation. Oxide film integrity was improved greatly by removing included organic bonds in the TES/H reaction film by exposing the film to H atoms before the oxidation step. Thus electrically excellent multilayer stacked oxide and nitride films were obtained in a deep trench.

BaTiO3 Thin Films Prepared by Organometallic Chemical Vapor Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
L.A. Wills ◽  
B.W. Wessels ◽  
D.L. Schulz ◽  
T.J. Marks
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Composition And Structure ◽  
Volatile Precursors ◽  
Surface Morphologies ◽  
Organometallic Chemical Vapor Deposition

AbstractBaTiO3 thin films have been prepared by low pressure organometallic chemical vapor deposition on (100) MgO and (100) LaAlO3 substrates using the volatile precursors, titanium(IV) tetraisopropoxide and barium (hexafluoroacetylacetonate)2 (tetraglyme). The phase composition and structure of the films depends on the reactant partial pressure, growth temperature, and substrate. High quality, epitaxial BaTiO3 films can be prepared in-situ on LaAlO3 as confirmed by x-ray diffraction measurements. These BaTiO3 films exhibit smooth surface morphologies as evidenced by scanning electron microscopy. Electrical resistivity measurements indicate that the films are semi-insulating.

Organometallic chemical vapor deposition of compound semiconductors

2004 ◽  
Vol 112 (2-3) ◽  
pp. 179-181 ◽  
Author(s):  
M. Grassi ◽  
D.A.W. Soares ◽  
A.A.A. de Queiroz ◽  
A.H.A. Bressiani ◽  
J.C. Bressiani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Compound Semiconductors ◽  
Organometallic Chemical Vapor Deposition

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped
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