Thermal stability of self-organized gratings and defects in Ge- and Ge-P-doped silica core fibers

1993 ◽  
Author(s):  
Tsung-Ein Tsai ◽  
E. J. Friebele ◽  
David L. Griscom
Keyword(s):  
Thermal Stability ◽  
Self Organized ◽  
Silica Core ◽  
Thermal Stability Of

scholarly journals Thermal Stability of Type II Modifications by IR Femtosecond Laser in Silica-based Glasses

Sensors ◽  
2020 ◽  
Vol 20 (3) ◽  
pp. 762 ◽  
Author(s):  
Shu-En Wei ◽  
Yitao Wang ◽  
Heng Yao ◽  
Maxime Cavillon ◽  
Bertrand Poumellec ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Glass Fibers ◽  
Clear Understanding ◽  
Type Ii ◽  
Silica Glasses ◽  
Pure Silica ◽  
Self Organized ◽  
Fs Laser ◽  
Thermal Stability Of ◽  
Glass Viscosity

Femtosecond (fs) laser written fiber Bragg gratings (FBGs) are excellent candidates for ultra-high temperature (>800 °C) monitoring. More specifically, Type II modifications in silicate glass fibers, characterized by the formation of self-organized birefringent nanostructures, are known to exhibit remarkable thermal stability around 1000 °C for several hours. However, to date there is no clear understanding on how both laser writing parameters and glass composition impact the overall thermal stability of these fiber-based sensors. In this context, this work investigates thermal stability of Type II modifications in various conventional glass systems (including pure silica glasses with various Cl and OH contents, GeO2-SiO2 binary glasses, TiO2- and B2O3-doped commercial glasses) and with varying laser parameters (writing speed, pulse energy). In order to monitor thermal stability, isochronal annealing experiments (Δt⁓ 30 min, ΔT⁓ 50 °C) up to 1400 °C were performed on the irradiated samples, along with quantitative retardance measurements. Among the findings to highlight, it was established that ppm levels of Cl and OH can drastically reduce thermal stability (by about 200 °C in this study). Moreover, GeO2 doping up to 17 mole% only has a limited impact on thermal stability. Finally, the relationships between glass viscosity, dopants/impurities, and thermal stability, are discussed.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of

Thermal stability of organic-inorganic nanocomposites based on system of dimethacrylate-tetraethoxysilane and their kinetic features

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inorganic Nanocomposites ◽  
Thermal Stability Of ◽  
Kinetic Features

The effect of salicylates on nonenzymatic glycosylation and thermal stability of collagen in diabetic rats

Diabetes ◽  
1984 ◽  
Vol 33 (8) ◽  
pp. 745-751 ◽  
Author(s):  
D. K. Yue ◽  
S. McLennan ◽  
D. J. Handelsman ◽  
L. Delbridge ◽  
T. Reeve ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diabetic Rats ◽  
Nonenzymatic Glycosylation ◽  
Thermal Stability Of
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