Infrared radiation source for assessment of imaging systems

1993 ◽  
Author(s):  
O. K. Shabashev ◽  
A. Muraveiskaya ◽  
N. A. Ivanova
Keyword(s):  
Infrared Radiation ◽  
Radiation Source ◽  
Imaging Systems

Intensity (of an Ultraviolet, Visible, or Infrared Radiation Source)

2016 ◽  
Author(s):  
Silvia E. Braslavsky ◽  
André M. Braun ◽  
Alberto E. Cassano ◽  
Alexei V. Emeline ◽  
Marta I. Litter ◽  
...  
Keyword(s):  
Infrared Radiation ◽  
Radiation Source

scholarly journals Attenuation of Infrared Radiation When Passing Through a Water Curtain

2017 ◽  
Vol 12 (1) ◽  
pp. 1-8
Author(s):  
Dalibor Balner ◽  
Karla Barčová ◽  
Michal Dostál
Keyword(s):  
Radiation Intensity ◽  
Infrared Radiation ◽  
Radiation Source ◽  
Water Mist ◽  
Water Droplets ◽  
Spray Characteristics ◽  
Ir Radiation ◽  
Water Curtain

Abstract This article focuses on the interaction of infrared (IR) radiation with water droplets. The main objective of the article is the production of water mist in order of evaluation the reduction in intensity of IR radiation. In the experiments described in this paper, a set of five different nozzles was used with various spray characteristics. The respective nozzles were gradually located between the IR radiation source and a detector and the attenuation of IR radiation was assessed. The reduction in IR radiation intensity was determined and IR radiation transmittance was calculated for the respective tested nozzles.

Characterization of Bulk-Grown Hg1-xcdxTe

1991 ◽  
Vol 49 ◽  
pp. 902-903
Author(s):  
H. Zuo ◽  
R.D. Griffin ◽  
G.M. Janowski ◽  
R.N. Andrews
Keyword(s):  
Infrared Radiation ◽  
Imaging Systems ◽  
Structural Perfection ◽  
Advanced Imaging ◽  
Compositional Homogeneity ◽  
Semiconducting Compounds

The II-VI semiconducting compounds are of particular interest due to the ability to compositionally tune them to detect infrared radiation in the 0.5 to 30 μm range. With the demand for advanced imaging systems, there is an immediate need for bulk II-VI materials with improved compositional homogeneity and structural perfection. The performance of optical semiconductors is very sensitive to the presence of defects such as dislocations, precipitates, and boundaries.

Large Orbit Gyrotron as High-Power Far-Infrared Radiation Source

2007 ◽  
Author(s):  
Weihua Jiang ◽  
Koichiro Hashimoto ◽  
Kohei Itoh ◽  
Toshiaki Hayashi ◽  
Teruo Saito ◽  
...  
Keyword(s):  
High Power ◽  
Infrared Radiation ◽  
Radiation Source ◽  
Far Infrared ◽  
Large Orbit Gyrotron ◽  
Far Infrared Radiation

scholarly journals RF system for the NSLS coherent infrared radiation source

2002 ◽  
Author(s):  
W. Broome ◽  
R. Biscardi ◽  
J. Keane ◽  
P. Mortazavi ◽  
M. Thomas ◽  
...  
Keyword(s):  
Infrared Radiation ◽  
Radiation Source ◽  
Rf System

Isothermal Annealing of Ion Implanted Silicon With a Graphite Radiation Source

1983 ◽  
Vol 13 ◽  
Author(s):  
S. R. Wilson ◽  
R. B. Gregory ◽  
W. M. Paulson ◽  
A. H. Hamdi ◽  
F. D. Mcdaniel
Keyword(s):  
Hall Effect ◽  
Sheet Resistance ◽  
Exposure Time ◽  
Infrared Radiation ◽  
Radiation Source ◽  
Isothermal Annealing ◽  
Thermally Stable ◽  
Dopant Diffusion ◽  
Minimum Value ◽  
Better Than

ABSTRACTBoth (100) and (111) Si wafers were implanted with As, P or B to doses from 1013 to 1016/cm2 and annealed with a Varian IA-200 isothermal annealer. The anneal occurs in a vacuum using infrared radiation for exposure times of 5 to 30 sec. Sheet resistance (Rs), Hall effect, RBS and SIMS were used to analyze the wafers. For each dopant a decreasing Rs occurs with increasing exposure time until a minimum value is reached. Longer anneals produce increased dopant diffusion, and the Rs for As and P implanted wafers increased unless the wafer was capped with 0.05 μm of SiO2 which prevents a loss of dopant. The results for (100) wafers are better than for (111) with As doses ≤1015/cm2, however at doses >1015/cm2 the (100) and (111) results are comparable. The As implanted, isothermally annealed layers were thermally stable for As concentrations ≤2E 20/cm3.

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