Enhancement of the harmonic performance of a semiconductor optical amplifier using bias current feedback

1993 ◽  
Author(s):  
Julie A. Constable ◽  
Ian H. White ◽  
Alastair N. Coles ◽  
David G. Cunningham
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Bias Current ◽  
Current Feedback

1.3 μm AlGaInAs-InP POLARIZATION-INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIER WITH TENSILE STRAINED WELLS GROWN BY MOVPE

2003 ◽  
Vol 02 (03) ◽  
pp. 119-123
Author(s):  
HONG MA ◽  
XINJIAN YI ◽  
SIHAI CHEN
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Entire Range ◽  
Multiple Quantum Well ◽  
Optical Amplifier ◽  
Ridge Waveguide ◽  
Bias Current ◽  
Waveguide Structure ◽  
Multiple Quantum ◽  
Material System ◽  
Polarization Insensitive

We demonstrate a polarization-insensitive multiple-quantum-well optical amplifer for 1.3 μm wavelength in AlGaInAs-InP material system, using three tensile strained wells with strain of 0.36% in the active region. The amplifiers were fabricated forming ridge waveguide structure, which showed excellent polarization insensitivity (less than 0.6 dB) over the entire range of wavelength (1.28 μm ~ 1.34 μm) and a gain of 22.5 dB at the bias current of 200 mA and 1304 nm wavelength.

scholarly journals Performance optimization of RSOA based mm-wave radio-over-fibre access network

2021 ◽  
Vol 53 (10) ◽  
Author(s):  
Eszter Udvary
Keyword(s):  
Millimeter Wave ◽  
Semiconductor Optical Amplifier ◽  
Access Network ◽  
Optical Amplifier ◽  
Bias Current ◽  
Critical Element ◽  
Optical Carrier ◽  
Wave Radio ◽  
Radio Over Fibre ◽  
Reflective Semiconductor Optical Amplifier

AbstractIn this paper, a Reflective Semiconductor Optical Amplifier based, Radio-over-Fibre access network configuration has been proposed to feed future millimeter-wave radio systems. The system architecture combines several approaches to overcome the challenges of millimeter-wave signal transmission. Reflective semiconductor optical amplifier modulator realizes a colorless and relatively cost-effective Remote Antenna Unit. The same optical carrier is used for both downlink and uplink. Optical single-sideband modulation is used at the downlink, which is robust against chromatic dispersion, but the complex realization of this modulation format is not possible at the Remote Antenna Unit. Optical intermediate frequency transmission is applied at the uplink direction, and the required local oscillator signal originates from the central station. The critical element is the reflective optical amplifier, as it compensates for the optical loss and works as an external intensity modulator. The operation of the reflective optical amplifier is modeled by multisection rate and wave equation-based description. The amplification and modulation behaviors of an available reflective optical amplifier are also measured. The experimental work validated the colorless operation and the quality of the modulation versus bias current and input optical power. Finally, system simulation was realized. The uplink and downlink power budgets were balanced, and optimal values for the optical coupling rate and RSOA bias current have been selected.

scholarly journals Impact of bias current distribution on the noise figure and power saturation of a multicontact semiconductor optical amplifier

2011 ◽  
Vol 36 (13) ◽  
pp. 2521 ◽  
Author(s):  
Robert Lennox ◽  
Kevin Carney ◽  
Ramón Maldonado-Basilio ◽  
Severine Philippe ◽  
A. Louise Bradley ◽  
...  
Keyword(s):  
Current Distribution ◽  
Semiconductor Optical Amplifier ◽  
Noise Figure ◽  
Optical Amplifier ◽  
Bias Current

Performance of Bus and Ring Network Topologies Based on SOA Bias Current

2017 ◽  
Vol 38 (3) ◽  
Author(s):  
Aruna Rani ◽  
Sanjeev Dewra
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Input Power ◽  
Bias Current ◽  
Ring Network ◽  
Ring Topology ◽  
Signal Input ◽  
Network Topologies

AbstractThis paper investigates the number of nodes supported in bus and ring network topologies based on bias current of semiconductor optical amplifier (SOA) at 10 Gb/s. It is found that in bus topology, maximum 91 nodes are supported for 400 mA bias current of SOA at –30 dBm signal input power. In ring topology, more than 100 nodes are supported for 400 mA current of SOA. It is also found that for 100 mA current, 28 nodes are supported in bus topology but in ring topology maximum supported nodes are 39. The number of supported nodes increases with increase in bias current of SOA.

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

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