Spatial mode characterization of high-power pulsed Nd:YAG lasers

1993 ◽  
Author(s):  
Bertram C. Johnson
Keyword(s):  
High Power ◽  
Spatial Mode ◽  
Nd:Yag Lasers

Characterization of a 808 nm High power Diode Laser module

2008 ◽  
Vol 4 (4) ◽  
pp. 1-10
Author(s):  
Ashraf. EL-Sherif ◽  
Mahmoud Hassan ◽  
Ayman Mokhtar ◽  
Ahmed Samy
Keyword(s):  
Diode Laser ◽  
High Power ◽  
Laser Module ◽  
Power Diode ◽  
High Power Diode Laser

Compensation of thermo-optical distortions in the active elements of high-power cw Nd:YAG lasers

1998 ◽  
Author(s):  
S. T. Durmanov ◽  
Vladimir V. Lyubimov ◽  
Yu. P. Rudnitskiy ◽  
Grigoriy Smirnov ◽  
M. A. Kurin ◽  
...  
Keyword(s):  
High Power ◽  
Active Elements ◽  
Nd:Yag Lasers

scholarly journals Characterization of High-Power Turbomachinery Tilting Pad Journal Bearings: First Results Obtained on a Novel Test Bench

Lubricants ◽  
2018 ◽  
Vol 6 (1) ◽  
pp. 4 ◽  
Author(s):  
Enrico Ciulli ◽  
Paola Forte ◽  
Mirko Libraschi ◽  
Lorenzo Naldi ◽  
Matteo Nuti
Keyword(s):  
High Power ◽  
Test Bench ◽  
Journal Bearings ◽  
Tilting Pad ◽  
First Results ◽  
Tilting Pad Journal Bearings

Characterization of Flat Radomes for 18-45 GHz High-Power Horn Antennas

2021 ◽  
pp. 1-1
Author(s):  
Conrad Andrews ◽  
Ljubodrag Boskovic ◽  
Dejan S. Filipovic
Keyword(s):  
High Power ◽  
Horn Antennas

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Signal Transmission ◽  
Mesa Structure ◽  
Microwave Characterization ◽  
Absorbing Layer ◽  
Analog Transmission

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

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