Effect of sulfur partial pressure on the growth of CuInS 2 single crystals

1992 ◽  
Author(s):  
M. Kanis ◽  
M. L. Fearheiley ◽  
K. Diesner ◽  
Sebastian Fiechter ◽  
B. Hermoneit ◽  
...  
Keyword(s):  
Partial Pressure ◽  
Single Crystals ◽  
Sulfur Partial Pressure

Single-crystal growth and characterization of the Pb0.5Sr2.5Y1−xCaxCu2Oy system

1995 ◽  
Vol 10 (9) ◽  
pp. 2211-2215 ◽  
Author(s):  
H. Jin ◽  
N.L. Wang ◽  
Y. Chong ◽  
M. Deng ◽  
L.Z. Cao ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Single Crystals ◽  
Single Crystal Growth ◽  
Optimum Conditions ◽  
Flux Method ◽  
Ca Doping ◽  
Spontaneous Nucleation

Two kinds of methods such as spontaneous nucleation from flux-free stoichiometric melt and CuO flux method have been used for the growth of Pb0.5Sr2.5Y1−xCaxCu2Oy single crystals. The morphologies, phases, and compositions occurring in the crystals grown from the two kinds of methods were compared systematically. Optimum conditions for the growth of larger 1212 phase single crystals are x =0.15, 0.25, and 0.35. The lattice parameters of the crystals with the 1212 phase were found to be increasing upon Ca doping. The resistivity behavior of the PbSrYCaCuO single crystals with the 1212 phase both in the state of as-grown and after extended annealings under various oxygen partial pressure was also discussed briefly.

Thermodynamic Analysis of Impurities in the Sublimation Growth of AlN Single Crystals

2006 ◽  
Vol 955 ◽  
Author(s):  
Li Du ◽  
James H Edgar
Keyword(s):  
Crystal Growth ◽  
Partial Pressure ◽  
Single Crystals ◽  
High Temperatures ◽  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Graphite Furnace ◽  
Main Species ◽  
Carbon Species ◽  
Sublimation Growth

ABSTRACTThe vapor phase species responsible for the transport of impurities in the sublimation-recondensation growth of bulk AlN crystals was predicted by thermodynamic analysis. AlN powder containing oxygen was investigated in Al-O-N system for an inert reactor. Dialuminum monoxide (Al2O) is strongly favored over all other possible oxygen containing species including NO and NO2. For AlN crystal growth in a graphite furnace, the Al-O-C-N system was studied. CO is the main species containing carbon and oxygen, and has a partial pressure more than one hundred times higher than all other carbon or oxygen containing species. Its partial pressure even exceeds that of Al vapor. Pure AlN growth on SiC seed was represented in the Al-N-Si-C system. SiC is not stable at high temperatures, the presence of nitrogen accelerates the decomposition of the SiC, and the most probable volatile silicon and carbon species originating from the SiC seed are Si, CN and C2N2.

Single Crystal Growth of YBa2Cu4O8 and Y2Ba4Cu7O15 Under High Oxygen Pressure

1991 ◽  
Vol 251 ◽  
Author(s):  
T. Miyatake ◽  
T. Takata ◽  
K. Yamaguchi ◽  
K. Takamuku ◽  
N. Koshizuka ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Single Crystal ◽  
Single Crystals ◽  
Oxygen Pressure ◽  
Maximum Size ◽  
Single Crystal Growth ◽  
Mixed Gas ◽  
High Oxygen Pressure

ABSTRACTWe investigate the crystal growth of YBa2Cu4O8 (124) and Y2Ba4Cu7O15 (247) in Al2O3 crucibles at an oxygen partial pressure of 20MPa employing an O2- HIP apparatus in a mixed gas environment of Ar-20%O2. Various melts compositions, rich in Ba and Cu, are explored to optimize crystal growth of 124. Large 124 single crystals up to a size of 1×0.5×0.05mm3 are obtained from compositions with about 65˜67%CuO. 247 single crystals having a maximum size of 3×1.5×0.05mm3 are grown from the same composition of melts. 124 crystals exhibit superconductivity at 75K. 247 crystals show Tc of 20K.

Influence of sulfur partial pressure on the structural performance of Cu2ZnSnS4 solar cells

2021 ◽  
Vol 123 ◽  
pp. 105552
Author(s):  
Xiaoming Li ◽  
Ruiting Hao ◽  
Kang Gu ◽  
Jie Guo ◽  
Jinghui Mo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Partial Pressure ◽  
Structural Performance ◽  
Sulfur Partial Pressure
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